Semiconductor memory device

ABSTRACT

A semiconductor memory device includes word lines, first and second select gate lines, first and second semiconductor columns, first and second bit lines, and first and second transistors. The word lines are arranged in a first direction. The first and second select gate lines extend in a second direction and overlap with the word lines viewed from the first direction. The first and second select gate lines are arranged in the second direction. The first semiconductor column is opposed to the word lines and the first select gate line. The second semiconductor column is opposed to the word lines and the second select gate line. The first and second bit lines extend in a third direction and overlap with the first and second semiconductor columns viewed from the first direction. The first and second transistors are electrically connected to the first and second select gate lines.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims the benefit of priorityunder 35 U.S.C. § 120 from U.S. application Ser. No. 17/950,306 filedSep. 22, 2022, which is a continuation of U.S. application Ser. No.17/304,789 filed Jun. 25, 2021 (now U.S. Pat. No. 11,488,675 issued Nov.1, 2022), and claims the benefit of priority under 35 U.S. C. § 119 fromJapanese Patent Application No. 2020-189844 filed Nov. 13, 2020, theentire contents of each of which are incorporated herein by reference.

BACKGROUND Field

Embodiments described herein relate generally to a semiconductor memorydevice.

Description of the Related Art

There has been known a semiconductor memory device that includes: asubstrate; a plurality of gate electrodes stacked in a directionintersecting with a surface of the substrate; a semiconductor columnopposed to the plurality of gate electrodes; and a gate insulating layerdisposed between the gate electrodes and the semiconductor column. Thegate insulating layer includes a memory unit configured to store data.The memory unit is, for example, an insulative electric chargeaccumulating layer of silicon nitride (Si₃N₄) or the like or aconductive electric charge accumulating layer, such as a floating gate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram illustrating a configuration of amemory die MD according to a first embodiment;

FIG. 2 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD;

FIG. 3 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD;

FIG. 4 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD;

FIG. 5 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD;

FIG. 6 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD;

FIG. 7 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD;

FIG. 8 is a schematic plan view of the memory die MD;

FIG. 9 is a schematic cross-sectional view of the memory die MD;

FIG. 10 is a schematic enlarged view of a part indicated by A in FIG. 8;

FIG. 11 is a schematic enlarged view of a part indicated by B in FIG. 8;

FIG. 12 is a schematic enlarged view of a part indicated by C in FIG. 11;

FIG. 13 is a schematic enlarged view of a part indicated by D in FIG. 12;

FIG. 14 is a schematic enlarged view of a part indicated by E in FIG. 9;

FIG. 15 is a schematic plan view illustrating a configuration disposedat a position overlapping with the configuration in FIG. 10 viewed froma Z-direction;

FIG. 16A is a schematic histogram for describing a threshold voltage ofa memory cell MC that stores 3-bit data;

FIG. 16B is a table showing an example of a relation between thethreshold voltage of the memory cell MC that stores the 3-bit data andthe stored data;

FIG. 16C is a table showing another example of the relation between thethreshold voltage of the memory cell MC that stores the 3-bit data andthe stored data;

FIG. 17 is a schematic waveform diagram for describing a read operationof a low-order bit;

FIG. 18 is a schematic plan view for describing the read operation;

FIG. 19 is a schematic cross-sectional view for describing the readoperation;

FIG. 20 is a schematic cross-sectional view for describing the readoperation;

FIG. 21 is a schematic waveform diagram for describing a read operationof a middle-order bit;

FIG. 22 is a schematic waveform diagram for describing a read operationof a high-order bit;

FIG. 23 is a schematic plan view for describing a read operationperformable in the memory die MD;

FIG. 24 is a schematic cross-sectional view for describing the readoperation;

FIG. 25 is a schematic block diagram illustrating a configuration of amemory die MD2 according to a second embodiment;

FIG. 26 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD2;

FIG. 27 is a schematic plan view for describing a read operationperformable in the memory die MD2;

FIG. 28 is a schematic cross-sectional view for describing the readoperation;

FIG. 29 is a schematic block diagram illustrating a configuration of amemory die MD3 according to a third embodiment;

FIG. 30 is a schematic cross-sectional view for describing a readoperation performable in the memory die MD3;

FIG. 31 is a schematic block diagram illustrating a configuration of amemory die MD4 according to a fourth embodiment;

FIG. 32 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD4;

FIG. 33 is a schematic waveform diagram for describing a read operationperformable in the memory die MD4;

FIG. 34 is a schematic block diagram illustrating a configuration of amemory die MD5 according to a fifth embodiment;

FIG. 35 is a schematic circuit diagram illustrating a part of theconfiguration of the memory die MD5;

FIG. 36 is a schematic plan view illustrating a part of theconfiguration of the memory die MD5;

FIG. 37 is a schematic waveform diagram for describing a read operationperformable in the memory die MD5;

FIG. 38 is a schematic waveform diagram for describing the readoperation performable in the memory die MD5;

FIG. 39 is a schematic waveform diagram for describing the readoperation performable in the memory die MD5;

FIG. 40 is a schematic cross-sectional view illustrating a part of aconfiguration of a memory die MD6 according to a sixth embodiment;

FIG. 41 is a schematic cross-sectional view illustrating a part of theconfiguration of the memory die MD6;

FIG. 42 is a schematic plan view illustrating a part of theconfiguration of the memory die MD6;

FIG. 43 is a schematic plan view illustrating a configuration of amemory die MD7 according to another embodiment;

FIG. 44 is a schematic enlarged view of a part indicated by F in FIG. 43;

FIG. 45 is a schematic enlarged view of a part indicated by G in FIG. 43;

FIG. 46 is a schematic plan view illustrating a configuration of amemory die MD8 according to another embodiment;

FIG. 47 is a schematic cross-sectional view of the memory die MD8;

FIG. 48 is a schematic perspective view illustrating a configuration ofa memory die MD9 according to another embodiment; and

FIG. 49 is a schematic waveform diagram for describing a read operationaccording to another embodiment.

DETAILED DESCRIPTION

A semiconductor memory device according to one embodiment comprises asubstrate, a plurality of first word lines, a first select gate line, asecond select gate line, a first semiconductor column, a secondsemiconductor column, a first bit line, a second bit line, a firsttransistor, and a second transistor. The plurality of first word linesare arranged in a first direction intersecting with a surface of thesubstrate. The first select gate line extends in a second directionintersecting with the first direction. The first select gate line isdisposed at a position overlapping with the plurality of first wordlines viewed from the first direction. The second select gate lineextends in the second direction. The second select gate line is disposedat a position overlapping with the plurality of first word lines viewedfrom the first direction. The second select gate line is arranged withthe first select gate line in the second direction. The firstsemiconductor column extends in the first direction. The firstsemiconductor column is opposed to the plurality of first word lines andthe first select gate line. The second semiconductor column extends inthe first direction. The second semiconductor column is opposed to theplurality of first word lines and the second select gate line. The firstbit line extends in a third direction intersecting with the firstdirection and the second direction. The first bit line is disposed at aposition overlapping with the first semiconductor column viewed from thefirst direction. The second bit line extends in the third direction. Thesecond bit line is disposed at a position overlapping with the secondsemiconductor column viewed from the first direction. The firsttransistor is electrically connected to the first select gate line. Thesecond transistor is electrically connected to the second select gateline.

Next, the semiconductor memory devices according to embodiments aredescribed in detail with reference to the drawings. The followingembodiments are only examples, and not described for the purpose oflimiting the present invention. The following drawings are schematic,and for convenience of description, a part of a configuration and thelike is sometimes omitted. Parts common in a plurality of embodimentsare attached by same reference numerals and their descriptions may beomitted.

In this specification, when referring to a “semiconductor memorydevice”, it may mean a memory die and may mean a memory system includinga control die, such as a memory chip, a memory card, and a Solid StateDrive (SSD). Further, it may mean a configuration including a hostcomputer, such as a smartphone, a tablet terminal, and a personalcomputer.

A “control circuit” in this specification may mean a peripheral circuit,such as a sequencer, disposed in a memory die, may mean a controllerdie, a controller chip, or the like connected to a memory die, and maymean a configuration including both of them.

In this specification, when referring to that a first configuration “iselectrically connected” to a second configuration, the firstconfiguration may be directly connected to the second configuration, andthe first configuration may be connected to the second configuration viaa wiring, a semiconductor member, a transistor, or the like. Forexample, when three transistors are connected in series, even when thesecond transistor is in OFF state, the first transistor is “electricallyconnected” to the third transistor.

In this specification, when referring to that the first configuration“is connected between” the second configuration and a thirdconfiguration, it may mean that the first configuration, the secondconfiguration, and the third configuration are connected in series andthe second configuration is connected to the third configuration via thefirst configuration.

In this specification, when referring to that a circuit or the like“electrically conducts” two wirings or the like, it may mean, forexample, that this circuit or the like includes a transistor or thelike, this transistor or the like is disposed on a current path betweenthe two wirings, and this transistor or the like is turned ON.

In this specification, a direction parallel to an upper surface of thesubstrate is referred to as an X-direction, a direction parallel to theupper surface of the substrate and perpendicular to the X-direction isreferred to as a Y-direction, and a direction perpendicular to the uppersurface of the substrate is referred to as a Z-direction.

In this specification, a direction along a predetermined plane may bereferred to as a first direction, a direction along this predeterminedplane and intersecting with the first direction may be referred to as asecond direction, and a direction intersecting with this predeterminedplane may be referred to as a third direction. These first direction,second direction, and third direction may each correspond to any of theX-direction, the Y-direction, and the Z-direction and need notcorrespond to these directions.

Expressions such as “above” and “below” in this specification are basedon the substrate. For example, a direction away from the substrate alongthe Z-direction is referred to as above and a direction approaching thesubstrate along the Z-direction is referred to as below. A lower surfaceand a lower end of a certain configuration mean a surface and an endportion at the substrate side of this configuration. An upper surfaceand an upper end of a certain configuration mean a surface and an endportion at aside opposite to the substrate of this configuration. Asurface intersecting with the X-direction or the Y-direction is referredto as aside surface and the like.

First Embodiment

[Circuit Configuration]

FIG. 1 is a schematic block diagram illustrating a configuration of amemory die MD according to the first embodiment. FIG. 2 to FIG. 7 areschematic circuit diagrams illustrating apart of the configuration ofthe memory die MD.

As illustrated in FIG. 1 , the memory die MD includes a memory cellarray MCA that stores data and a peripheral circuit PC connected to thememory cell array MCA. The peripheral circuit PC includes a blockdecoder BLKD, a word line decoder WLD, a drain-side select gate linedecoder SGDD, a driver circuit DRV, and a voltage generation circuit VG.The peripheral circuit PC includes sense amplifier modules SAM, cachememories CM, a sequencer SQC, an address register ADR, and aninput/output control circuit I/O.

Note that FIG. 1 illustrates only one memory cell array MCA included inthe memory die MD as an example. However, the memory die MD may includetwo or more memory cell arrays MCA. In such a case, for example, a partof the configuration in the peripheral circuit PC may be disposed inplural corresponding to the memory cell arrays MCA. For example, theconfigurations, such as the block decoder BLKD, the word line decoderWLD, the drain-side select gate line decoder SGDD, the sense amplifiermodules SAM, and the cache memory CM, may be disposed in pluralcorresponding to the memory cell arrays MCA. A part of the configurationin the peripheral circuit PC may be common to the plurality of memorycell arrays MCA. For example, the configurations, such as the voltagegeneration circuit VG, the sequencer SQC, and the input/output circuitI/O, may be common to the plurality of memory cell arrays MCA.

[Circuit Configuration of Memory Cell Array MCA]

As illustrated in FIG. 2 , the memory cell array MCA includes aplurality of memory blocks BLK (a memory block BLK_(A) to a memory blockBLK_(D) in the illustrated example). As illustrated in FIG. 3 , thememory block BLK includes a plurality of respective string units SU (astring unit SUa to a string unit SUj in the illustrated example). Theplurality of string units SU each include a plurality of memory stringsMS. One ends of the plurality of memory strings MS in the string unitSUa to the string unit SUe are each connected to the peripheral circuitPC via bit lines BLa. One ends of the plurality of memory strings MS inthe string unit SUf to the string unit SUj are each connected to theperipheral circuit PC via bit lines BLf. The other ends of the pluralityof memory strings MS in the string unit SUa to the string unit SUj areeach connected to the peripheral circuit PC via a common source line SL.

The memory string MS includes a drain-side select transistor STD, aplurality of memory cells MC (memory transistors), and a source-sideselect transistor STS, which are connected in series between the bitline BLa or the bit line BLf and the source line SL. Hereinafter, thedrain-side select transistor STD and the source-side select transistorSTS are simply referred to as select transistors (STD, STS) in somecases.

The memory cell MC is a field-effect type transistor including asemiconductor layer that functions as a channel region, a gateinsulating film including an electric charge accumulating film, and agate electrode. The memory cell MC has a threshold voltage that changesaccording to an electric charge amount in the electric chargeaccumulating film. The memory cell MC stores data of one bit or aplurality of bits. Word lines WL are connected to respective gateelectrodes of the plurality of memory cells MC corresponding to onememory string MS. These respective word lines WL are connected to all ofthe memory strings MS in one memory block BLK in common.

The select transistor (STD, STS) is a field-effect type transistorincluding a semiconductor layer that functions as a channel region, agate insulating film, and a gate electrode. Select gate lines (SGD, SGS)are connected to the respective gate electrodes of the selecttransistors (STD, STS). The drain-side select gate line SGD is disposedcorresponding to the string unit SU and connected to all of the memorystrings MS in one string unit SU in common. The source-side select gateline SGS is connected to all of the memory strings MS in one memoryblock BLK in common. In the following description, the drain-side selectgate line SGD corresponding to the string unit SUa is referred to as adrain-side select gate line SGDa in some cases. Similarly, thedrain-side select gate lines SGD corresponding to the string unit SUb tothe string unit SUj are referred to as a drain-side select gate lineSGDb to a drain-side select gate line SGDj in some cases.

[Circuit Configuration of Block Decoder BLKD]

As illustrated in FIG. 4 and FIG. 5 , the block decoder BLKD includes aplurality of block decode units blkd. As illustrated in FIG. 2 , theplurality of block decode units blkd are disposed corresponding to theplurality of memory blocks BLK in the memory cell array MCA. Asillustrated in FIG. 4 and FIG. 5 , the block decode unit blkd includes aplurality of transistors T_(BLK). Although a part of them is omitted inthe drawing for convenience, the plurality of transistors T BLK aredisposed corresponding to the plurality of word lines WL, the drain-sideselect gate line SGDa to the drain-side select gate line SGDj, and thesource-side select gate line SGS in the memory block BLK. The transistorT_(BLK) is, for example, a field-effect type NMOS transistor. Asillustrated in FIG. 5 , the block decode unit blkd includes a pluralityof transistors T_(BLK)′. The plurality of transistors T_(BLK)′ aredisposed corresponding to the plurality of select gate lines (SGD, SGS)in the memory block BLK. The transistor T_(BLK)′ is, for example, afield-effect type PMOS transistor.

As illustrated in FIG. 2 , a drain electrode of the transistor T_(BLK)is connected to the word line WL or the select gate line (SGD, SGS). Asource electrode of the transistor T_(BLK) is connected to a wiring CG.Note that FIG. 2 and the like denote the wiring CG electricallyconnected to the word line WL as a wiring CG_(WL), the wiring CGelectrically connected to the drain-side select gate line SGD as awiring CG_(SGD), and the wiring CG electrically connected to thesource-side select gate line SGS as a wiring CG_(SGS). The wirings CGare connected to all of the block decode units blkd in the block decoderBLKD. A gate electrode of the transistor T_(BLK) is connected to asignal supply line BLKSEL. A plurality of the signal supply lines BLKSELare disposed corresponding to all of the block decode units blkd. Thesignal supply line BLKSEL is connected to all of the transistors T_(BLK)in the block decode unit blkd.

As illustrated in FIG. 5 , a drain electrode of the transistor T_(BLK)′is connected to the select gate line (SGD, SGS). A source electrode ofthe transistor T_(BLK)′ is connected to a bonding pad electrode P towhich a ground voltage V_(SS) is supplied. A gate electrode of thetransistor T_(BLK)′ is connected to a signal supply line BLKSEL′. Thesignal supply line BLKSEL′ is connected to all of the transistorsT_(BLK)′ in the block decode unit blkd.

In a read operation, a write sequence, and the like, for example, onesignal supply line BLKSEL (FIG. 2 ) corresponding to a block addressA_(BLK) in the address register ADR (FIG. 1 ) becomes an “H” state, andthe other signal supply lines BLKSEL become an “L” state. For example, apredetermined driving voltage having a positive magnitude is supplied tothe one signal supply line BLKSEL, and the ground voltage V_(SS) or thelike is supplied to the other signal supply lines BLKSEL. Accordingly,all of the word lines WL in one memory block BLK corresponding to thisblock address A_(BLK) are electrically conducted to the wirings CG_(WL).All of the word lines WL in the other memory blocks BLK become afloating state. Additionally, all of the select gate lines (SGD, SGS) inone memory block BLK corresponding to the block address A_(BLK)electrically conducts with the wirings CG_(SGD), CG_(SGS). The groundvoltage V_(SS) is supplied to all of the select gate lines (SGD, SGS) inthe other memory blocks BLK.

[Circuit Configuration of Word Line Decoder WLD]

As illustrated in FIG. 4 , the word line decoder WLD includes aplurality of word line decode units wld disposed corresponding to theplurality of word lines WL in the memory block BLK. In the illustratedexample, the word line decode unit wld includes two transistors T_(WL).The transistor T_(WL) is, for example, a field-effect type NMOStransistor. A drain electrode of the transistor T_(WL) is connected tothe wiring CG_(WL). A source electrode of the transistor T_(WL) isconnected to a wiring CG_(S) or a wiring CG_(U). A gate electrode of thetransistor T_(WL) is connected to a signal supply line WLSEL_(S) or asignal supply line WLSEL_(U). A plurality of the signal supply linesWLSEL_(S) are disposed corresponding to one transistors T_(WL) includedin all of the word line decode units wld. A plurality of the signalsupply lines WLSEL_(U) are disposed corresponding to the othertransistors T_(WL) included in all of the word line decode units wld.

In the read operation, the write sequence, and the like, for example,the signal supply line WLSEL_(S) corresponding to one word line decodeunit wld (FIG. 4 ) corresponding to a word line address A_(WL) in theaddress register ADR (FIG. 1 ) becomes an “H” state. The signal supplyline WLSEL_(U) corresponding to this becomes an “L” state. The signalsupply lines WLSEL_(S) corresponding to the other word line decode unitswld become an “L” state. The signal supply lines WLSEL_(U) correspondingto these become an “H” state. A voltage corresponding to the selectedword line WL is supplied to the wiring CG_(S). A voltage correspondingto the unselected word lines WL is supplied to the wiring CG_(H). Thus,the voltage corresponding to the selected word line WL is supplied toone word line WL corresponding to the word line address A_(WL). Thevoltage corresponding to the unselected word lines WL is supplied to theother word lines WL.

Note that in the example of FIG. 4 , each word line decode unit wldincludes the two transistors T_(WL). However, the configuration is onlyan example, and a specific configuration is appropriately adjustable.For example, in a case where the voltages of the word lines WL arecontrolled in three or more patterns, each word line decode unit wld mayinclude the three or more transistors T_(WL). Note that the case inwhich the voltages of the word lines WL are controlled in the threepatterns includes, for example, a voltage greater than those of theother unselected word lines WL is supplied to the unselected word lineWL adjacent to the selected word line WL and the like.

[Circuit Configuration of Drain-Side Select Gate Line Decoder SGDD]

As illustrated in FIG. 5 , the drain-side select gate line decoder SGDDincludes a plurality of drain-side select gate line decode units sgdddisposed corresponding to the plurality of drain-side select gate linesSGD in the memory block BLK. In the illustrated example, the drain-sideselect gate line decode unit sgdd includes two transistors T_(SGD). Thetransistor T_(SGD) is, for example, a field-effect type NMOS transistor.A drain electrode of the transistor T_(SGD) is connected to the wiringCG_(SGD). A source electrode of the transistor T_(SGD) is connected to awiring CG_(S) or a wiring CG_(U). A gate electrode of the transistorT_(SGD) is connected to a signal supply line SGDSEL_(S) or a signalsupply line SGDSEL_(U). A plurality of the signal supply linesSGDSEL_(S) are disposed corresponding to one transistors T_(SGD)included in all of the drain-side select gate line decode units sgdd. Aplurality of the signal supply lines SGDSEL_(U) are disposedcorresponding to the other transistors T_(SGD) included in all of thedrain-side select gate line decode units sgdd.

In the read operation, the write sequence, and the like, for example,the signal supply line SGDSEL_(S) corresponding to one drain-side selectgate line decode unit sgdd (FIG. 5 ) corresponding to a string addressA_(SU) in the address register ADR (FIG. 1 ) becomes an “H” state. Thesignal supply line SGDSEL_(U) corresponding to this becomes an “L”state. The signal supply lines SGDSEL_(S) corresponding to the otherdrain-side select gate line decode units sgdd become an “L” state andthe signal supply lines SGDSEL_(U) corresponding to these become an “H”state. A voltage corresponding to the selected drain-side select gateline SGD is supplied to the wiring CG_(S). A voltage corresponding tothe unselected drain-side select gate lines SGD is supplied to thewiring CG_(U). Thus, the voltage corresponding to the selecteddrain-side select gate line SGD is supplied to one drain-side selectgate line SGD corresponding to the string address A_(SU). The voltagecorresponding to the unselected drain-side select gate lines SGD issupplied to the other drain-side select gate lines SGD.

As illustrated in FIG. 1 , the memory die MD includes the two drain-sideselect gate line decoders SGDD. One drain-side select gate line decoderSGDD is electrically connected to the drain-side select gate line SGDato the drain-side select gate line SGDe (FIG. 2 ). The other drain-sideselect gate line decoder SGDD is electrically connected to a drain-sideselect gate line SGDf to the drain-side select gate line SGDj (FIG. 2 ).Additionally, as illustrated in FIG. 1 , the address register ADR isconfigured to simultaneously latch two string addresses A_(SU). One ofthe two string address A_(SU) corresponds to one of the string unit SUato the string unit SUe. The other one among the two string addressesA_(SU) corresponds to one of the string unit SUf to the string unit SUj.The memory die MD is configured to simultaneously select two drain-sideselect gate lines according to the two string addresses A_(SU) in theread operation, the write sequence, and the like.

[Circuit Configuration of Driver Circuit DRV]

For example, as illustrated in FIG. 1 , the driver circuit DRV includesa plurality of driver units drv. For example, the driver units drv aredisposed corresponding to the wiring CG_(S) and the wiring CG_(U) in theword line decoder WLD, the wiring CG_(S) and the wiring CG_(U) in thedrain-side select gate line decoder SGDD, the source line SL, and thelike. For example, as illustrated in FIG. 4 and FIG. 5 as an example,the driver unit drv includes a plurality of transistors T_(DRV). Thetransistor T_(DRV) is, for example, a field-effect type NMOS transistor.Drain electrodes of the transistors T_(DRV) are connected to the wiringCG_(S), the wiring CG_(S), and the like. A source electrode of thetransistor T_(DRV) is connected to a voltage supply line L_(VG) or avoltage supply line L_(P). The voltage supply line L_(VG) is connectedto one of a plurality of output terminals in the voltage generationcircuit VG. The voltage supply line L_(P) is connected to the bondingpad electrode P to which the ground voltage V_(SS) is supplied. Gateelectrodes of the transistors T_(DRV) are each connected to a signalsupply line VSEL.

In the read operation, the write sequence, and the like, for example,any of the plurality of signal supply lines VSEL in the driver unit drvbecomes an “H” state and the other signal supply lines VSEL become an“L” state.

[Circuit Configuration of Voltage Generation Circuit VG]

For example, as illustrated in FIG. 4 and FIG. 5 , the voltagegeneration circuit VG includes a plurality of voltage generation unitsvg. In the read operation, the write sequence, and the like, the voltagegeneration unit vg generates a voltage of a predetermined magnitude, andoutputs it to the voltage supply line L_(VG). For example, the voltagegeneration unit vg may be a step up circuit, such as a charge pumpcircuit, or may be a step down circuit, such as a regulator. Forexample, the voltage generation circuit VG generates a plurality ofpatterns of operating voltages in accordance with a control signal fromthe sequencer SQC. In the read operation, the write sequence, and thelike, the plurality of patterns of operating voltages are applied to thebit line BLa, the bit line BLf, the source line SL, the word line WL,and the select gate line (SGD, SGS). The operating voltages output fromthe plurality of voltage generation units vg are appropriately adjustedin accordance with the control signals from the sequencer SQC.

[Circuit Configuration of Sense Amplifier Module SAM]

The sense amplifier module SAM will be described with reference to FIG.6 and FIG. 7 . Although FIG. 6 and FIG. 7 use the bit lines BLa as anexample, the same applies to the bit lines BLf. For example, asillustrated in FIG. 6 , the sense amplifier module SAM includes aplurality of sense amplifier units SAU corresponding to the plurality ofbit lines BLa. The sense amplifier units SAU each include a senseamplifier SA connected to the bit line BLa, a wiring LBUS connected tothe sense amplifier SA, latch circuits SDL, DL0 to DLn_(L) (n_(L) is apositive integer of 1 or more) connected to the wiring LBUS, and acharge transistor 55 (FIG. 7 ) for precharging connected to the wiringLBUS. The wiring LBUS in the sense amplifier unit SAU is connected to awiring DBUS via a switch transistor DSW.

As illustrated in FIG. 7 , the sense amplifier SA includes a sensetransistor 41. The sense transistor 41 discharges electric charges ofthe wiring LBUS according to a current flowed in the bit line BLa. Asource electrode of the sense transistor 41 is connected to the voltagesupply line to which the ground voltage V_(SS) is supplied. A drainelectrode is connected to the wiring LBUS via a switch transistor 42. Agate electrode is connected to the bit line BLa via a sense node SEN, adischarge transistor 43, a node COM, a clamp transistor 44, and a highvoltage transistor 45. Note that the sense node SEN is connected aninternal control signal line CLKSA via a capacitor 48.

Additionally, the sense amplifier SA includes a voltage transfercircuit. The voltage transfer circuit selectively electrically conductsthe node COM and the sense node SEN with the voltage supply line towhich a voltage V_(DD) is supplied or the voltage supply line to which avoltage V_(SRC) is supplied according to data latched by a latch circuitSDL. The voltage transfer circuit includes a node N1, a chargetransistor 46, a charge transistor 49, a charge transistor 47, and adischarge transistor 50. The charge transistor 46 is connected betweenthe node N1 and the sense node SEN. The charge transistor 49 isconnected between the node N1 and the node COM. The charge transistor 47is connected between the node N1 and the voltage supply line to whichthe voltage V_(DD) is supplied. The discharge transistor 50 is connectedbetween the node N1 and the voltage supply line to which the voltageV_(SRC) is supplied. Note that gate electrodes of the charge transistor47 and the discharge transistor 50 are connected to a node INV_S of thelatch circuit SDL in common.

Note that the sense transistor 41, the switch transistor 42, thedischarge transistor 43, the clamp transistor 44, the charge transistor46, the charge transistor 49, and the discharge transistor 50 are, forexample, enhancement type NMOS transistors. The high voltage transistor45 is, for example, a depletion type NMOS transistor. The chargetransistor 47 is, for example, a PMOS transistor.

A gate electrode of the switch transistor 42 is connected to a signalline STB. A gate electrode of the discharge transistor 43 is connectedto a signal line XXL. A gate electrode of the clamp transistor 44 isconnected to a signal line BLC. A gate electrode of the high voltagetransistor 45 is connected to a signal line BLS. A gate electrode of thecharge transistor 46 is connected to a signal line HLL. A gate electrodeof the charge transistor 49 is connected to a signal line BLX. Thesesignal lines STB, XXL, BLC, BLS, HLL, and BLX are connected to thesequencer SQC.

The latch circuit SDL includes nodes LAT_S and INV_S, inverters 51, 52connected between the nodes LAT_S, INV_S, and switch transistors 53, 54connected to the nodes LAT_S, INV_S. The inverter 51 includes an outputterminal connected to the node LAT_S and an input terminal connected tothe node INV_S. The inverter 52 includes an input terminal connected tothe node LAT_S and an output terminal connected to the node INV_S. Theswitch transistors 53, 54 are, for example, NMOS transistors. The switchtransistor 53 is connected between the node LAT_S and the wiring LBUS.The switch transistor 54 is connected between the node INV_S and thewiring LBUS. A gate electrode of the switch transistor 53 is connectedto the sequencer SQC via a signal line STL. Agate electrode of theswitch transistor 54 is connected to the sequencer SQC via a signal lineSTI.

The latch circuits DL0 to DLn_(L) are configured substantially similarlyto the latch circuit SDL. However, as described above, the node INV_S inthe latch circuit SDL electrically conducts with the gate electrodes ofthe charge transistor 47 and the discharge transistor 50 in the senseamplifier SA. The latch circuits DL0 to DLn_(L) differ from the latchcircuit SDL in this respect.

The switch transistor DSW is, for example, an NMOS transistor. Theswitch transistor DSW is connected between the wiring LBUS and thewiring DBUS. A gate electrode of the switch transistor DSW is connectedto the sequencer SQC via a signal line DBS (FIG. 6 ).

As illustrated in FIG. 6 as an example, the above-described respectivesignal lines STB, HLL, XXL, BLX, BLC, BLS are connected in common amongall of the sense amplifier units SAU included in the sense amplifiermodule SAM. The above-described respective voltage supply line to whichthe voltage V_(DD) is supplied and voltage supply line to which thevoltage V_(SRC) is supplied are connected in common among all of thesense amplifier units SAU included in the sense amplifier module SAM.Additionally, the respective signal line STI and signal line STL in thelatch circuit SDL are connected in common among all of the senseamplifier units SAU included in the sense amplifier module SAM.Similarly, respective signal lines TI0 to TIn_(L) and TL0 to TLn_(L)corresponding to the signal lines STI and the signal lines STL in thelatch circuits DL0 to DLn_(L) are connected in common among all of thesense amplifier units SAU included in the sense amplifier module SAM. Onthe other hand, the above-described respective signal lines DBS aredisposed in plural corresponding to all of the sense amplifier units SAUincluded in the sense amplifier module SAM.

[Circuit Configuration of Cache Memory CM]

The cache memory CM (FIG. 1 ) includes a plurality of latch circuitsconnected to the latch circuits in the sense amplifier module SAM viathe wiring DBUS. Data included in the plurality of latch circuits issequentially transferred to the sense amplifier module SAM or theinput/output control circuit I/O.

To the cache memory CM, a decode circuit and a switch circuit (notillustrated) are connected. The decode circuit decodes a column addresslatched in the address register ADR (FIG. 1 ). The switch circuitelectrically conducts the latch circuit corresponding to the columnaddress with the input/output control circuit I/O (FIG. 1 ) in responseto an output signal from the decode circuit.

[Circuit Configuration of Sequencer SQC]

The sequencer SQC (FIG. 1 ) outputs an internal control signal to thedriver circuit DRV, the sense amplifier module SAM, and the voltagegeneration circuit VG in response to command data latched in a commandregister (not illustrated). The sequencer SQC outputs status dataindicating its own state to a status register (not illustrated) asnecessary.

The sequencer SQC generates a ready/busy signal and outputs theready/busy signal to a ready/busy terminal (not illustrated). In aperiod in which the ready/busy terminal is in an “L” state, an accessfrom a controller die (not illustrated) to the memory die MD isbasically inhibited. In a period in which the ready/busy terminal is inan “H” state, the access from the controller die (not illustrated) tothe memory die MD is permitted.

[Circuit Configuration of Input/Output Control Circuit I/O]

For example, the input/output control circuit I/O includes data signalinput/output terminals (not illustrated), an input circuit, such as acomparator, and an output circuit, such as an Off Chip Driver (OCD)circuit connected to the data signal input/output terminals. Theinput/output control circuit I/O includes a shift register connected tothe input circuit and the output circuit and a buffer circuit.

[Structure of Memory Die MD]

FIG. 8 is a schematic plan view of the memory die MD. FIG. 9 is aschematic cross-sectional view of the memory die MD. FIG. 10 is aschematic enlarged view of a part indicated by A in FIG. 8 . FIG. 11 isa schematic enlarged view of a part indicated by B in FIG. 8 . FIG. 12is a schematic enlarged view of a part indicated by C in FIG. 11 . FIG.13 is a schematic enlarged view of a part indicated by D in FIG. 12 .FIG. 14 is a schematic enlarged view of a part indicated by E in FIG. 9. FIG. 15 is a schematic plan view illustrating a configuration disposedat a position overlapping with the configuration in FIG. 10 viewed fromthe Z-direction. Note that FIG. 10 and FIG. 15 omit a part of a region(a first hook-up region R_(HU1) described later).

For example, as illustrated in FIG. 8 , the memory die MD includes asemiconductor substrate 100. In the illustrated example, thesemiconductor substrate 100 includes four memory cell array regionsR_(MCA) arranged in the X-direction and the Y-direction. The memory cellarray region R_(MA) includes two memory hole regions R_(MH) arranged inthe X-direction. The two first hook-up regions R_(HU1) arranged in theX-direction and a second hook-up region R_(HU2) disposed between thefirst hook-up regions R_(HU1) are disposed between the two memory holeregions R_(MH). Additionally, a peripheral region R_(P) is disposed inan end portion in the Y-direction of the semiconductor substrate 100.The peripheral region R_(P) extends in the X-direction along the endportion in the Y-direction of the semiconductor substrate 100.

For example, as illustrated in FIG. 9 , the memory die MD includes atransistor layer L_(TR) disposed above the semiconductor substrate 100,a wiring layer D0 disposed above the transistor layer L_(TR), a wiringlayer D1 disposed above the wiring layer D0, and a wiring layer D2disposed above the wiring layer D1. Additionally, the memory die MDincludes a memory cell array layer L_(MCA) disposed above the wiringlayer D2, and a wiring layer M0 disposed above the memory cell arraylayer L_(MCA). Although FIG. 9 omits the illustration, a plurality ofwiring layers are further disposed above the wiring layer M0.

[Structure of Semiconductor Substrate 100]

For example, the semiconductor substrate 100 is a semiconductorsubstrate made of P-type silicon (Si) containing P-type impurities, suchas boron (B). On a surface of the semiconductor substrate 100, an N-typewell region containing N-type impurities, such as phosphorus (P), aP-type well region containing P-type impurities, such as boron (B), asemiconductor substrate region in which the N-type well region and theP-type well region are not disposed, and an insulating region 100I ofsilicon oxide (SiO₂) or the like are disposed.

[Structure of Transistor Layer L_(TR)]

For example, as illustrated in FIG. 9 , a wiring layer GC is disposed onan upper surface of the semiconductor substrate 100 via an insulatinglayer (not illustrated). The wiring layer GC includes a plurality ofelectrodes gc opposed to the surface of the semiconductor substrate 100.The respective regions of the semiconductor substrate 100 and theplurality of electrodes gc included in the wiring layer GC are eachconnected to contacts CS.

The N-type well region, the P-type well region, and the semiconductorsubstrate region of the semiconductor substrate 100 each function aschannel regions of the plurality of transistors Tr, one electrodes of aplurality of capacitors, and the like constituting the peripheralcircuit PC.

The plurality of respective electrodes gc included in the wiring layerGC function as the gate electrodes of the plurality of transistors Tr,the other electrodes of the plurality of capacitors, and the likeconstituting the peripheral circuit PC.

The contact CS extends in the Z direction and is connected to thesemiconductor substrate 100 or the upper surface of the electrode gc ata lower end. In a connection part between the contact CS and thesemiconductor substrate 100, an impurity region containing N-typeimpurities or P-type impurities is disposed. For example, the contact CSmay include a stacked film of a barrier conductive film, such astitanium nitride (TiN), and a metal film, such as tungsten (W), or thelike.

[Structures of Wiring Layers D0, D1, D2]

For example, as illustrated in FIG. 9 , the plurality of wiringsincluded in the wiring layers D0, D1, D2 are electrically connected toat least one of the configuration in the memory cell array layerL_(MCA), the configuration in the transistor layer L_(TR), and thesemiconductor substrate 100.

The respective wiring layers D0, D1, D2 include a plurality of wiringsd0, d1, d2. For example, the plurality of wirings d0, d1, d2 may includea stacked film of a barrier conductive film, such as titanium nitride(TiN) or tantalum nitride (TaN), and a metal film, such as tungsten (W),copper (Cu), or aluminum (Al), or the like.

[Structure in Memory Hole Region R_(MH) in Memory Cell Array LayerL_(MCA)]

For example, as illustrated in FIG. 10 , the memory cell array layerL_(MCA) includes a plurality of memory blocks BLK (the memory blockBLK_(A) to a memory block BLK_(II) in the example of FIG. 10) arrangedin the Y-direction.

In the following description, the first, the 4n_(B)-th (n_(B) is apositive integer of 1 or more), and the 4n_(B)+1-th memory blocks BLKcounted from one side in the Y-direction (for example, the Y-directionnegative side in FIG. 10 ) are referred to as memory blocks BLKa in somecases. FIG. 10 illustrates memory blocks BLK_(A), BLK_(D), BLK_(E),BLK_(H) as the memory blocks BLKa as an example. In the followingdescription, the second, the third, the 4n_(B)+2-th, and the 4n_(B)+3-thmemory blocks BLK counted from one side in the Y-direction (for example,the Y-direction negative side in FIG. 10 ) are referred to as memoryblocks BLKf in some cases. FIG. 10 illustrates memory blocks BLK_(B),BLK_(C), BLK_(F), BLK_(G) as the memory blocks BLKf as an example.

For example, as illustrated in FIG. 12 , the memory block BLK includesthe plurality of string units SU (the string unit SUa to the string unitSUe in the example of FIG. 12 ) arranged in the Y-direction. Asillustrated in FIG. 12 , the plurality of string units SUa to stringunits SUe are disposed at one side in the X-direction (for example, theX-direction negative side in FIG. 12 ). Although the illustration isomitted, the plurality of string units SUf to string units SUj (FIG. 3 )are disposed at the other side in the X-direction (for example, theX-direction positive side in FIG. 12 ). Between the two memory blocksBLK adjacent in the Y-direction, an inter-block insulating layer ST,such as silicon oxide (SiO₂), is disposed. For example, as illustratedin FIG. 13 , between the two string units SU adjacent in theY-direction, an inter-string unit insulating layer SHE, such as siliconoxide (SiO₂), is disposed.

For example, as illustrated in FIG. 9 , the memory block BLK includes aplurality of conductive layers 110 arranged in the Z-direction and aplurality of semiconductor columns 120 extending in the Z-direction. Forexample, as illustrated in FIG. 14 , the memory block BLK includes aplurality of respective gate insulating films 130 disposed between theplurality of conductive layers 110 and the plurality of semiconductorcolumns 120.

The conductive layer 110 is a substantially plate-shaped conductivelayer extending in the X-direction. The conductive layer 110 includes aplurality of through-holes disposed corresponding to the semiconductorcolumns 120. Respective inner peripheral surfaces of the plurality ofthrough-holes are opposed to outer peripheral surfaces of thesemiconductor columns 120 via the gate insulating films 130. Theconductive layer 110 may include a stacked film of a barrier conductivefilm, such as titanium nitride (TiN), and a metal film, such as tungsten(W), or the like. For example, the conductive layer 110 may containpolycrystalline silicon containing impurities, such as phosphorus (P) orboron (B), or the like. Between the plurality of conductive layers 110arranged in the Z-direction, insulating layers 101, such as siliconoxide (SiO₂), are disposed.

As illustrated in FIG. 9 , a conductive layer 111 is disposed below theconductive layers 110. For example, the conductive layer 111 may includepolycrystalline silicon containing impurities, such as phosphorus (P) orboron (B), or the like. Between the conductive layer 111 and theconductive layers 110, an insulating layer, such as silicon oxide(SiO₂), is disposed.

A conductive layer 112 is disposed below the conductive layer 111. Theconductive layer 112 may contain, for example, polycrystalline siliconcontaining impurities, such as phosphorus (P) or boron (B), or the like.The conductive layer 112 may include, for example, a metal, such astungsten (W), a conductive layer, such as tungsten silicide, or anotherconductive layer. Between the conductive layer 112 and the conductivelayer 111, an insulating layer, such as silicon oxide (SiO₂), isdisposed.

The conductive layer 112 functions as the source line SL (FIG. 3 ). Thesource line SL is, for example, disposed in common among all of thememory blocks BLK included in the memory cell array region R_(MCA) (FIG.8 ).

The conductive layer 111 functions as the source-side select gate lineSGS (FIG. 3 ) and the gate electrodes of the plurality of source-sideselect transistors STS connected thereto. The conductive layers 111 iselectrically independent for each memory block BLK.

Among the plurality of conductive layers 110, one or a plurality ofconductive layers 110 positioned at the lowermost layer function as thesource-side select gate line SGS (FIG. 3 ) and the gate electrodes ofthe plurality of source-side select transistors STS connected thereto.The one or the plurality of conductive layers 110 are electricallyindependent for each memory block BLK.

Each of a plurality of conductive layers 110 positioned above theseconductive layers 110 functions as the word line WL (FIG. 3 ) and thegate electrodes of the plurality of memory cells MC (FIG. 3 ) connectedto this word line WL. The plurality of conductive layers 110 are eachelectrically independent for every memory block BLK.

One or a plurality of conductive layers 110 positioned above theseconductive layers 110 function as the drain-side select gate line SGDand gate electrodes of the plurality of drain-side select transistorsSTD (FIG. 3 ) connected thereto. The plurality of conductive layers 110have widths Y_(SGD) in the Y-direction smaller than widths Y_(WL) ofother conductive layers 110 function as the word line WL as illustratedin FIG. 13 . Between the two conductive layers 110 adjacent in theY-direction, the inter-string unit insulating layer SHE is disposed.Additionally, the conductive layers 110 that function as the word linesWL and the like extend in the X-direction from one of the two memoryhole regions R_(MH) adjacent in the X-direction to the other via the twofirst hook-up regions R_(HU1) and second hook-up region R_(HU2). On theother hand, the conductive layer 110 that functions as the drain-sideselect gate line SGD extends in the X-direction from one memory holeregion R_(MH) to a contact connection sub-region r_(CC1) in the firsthook-up region R_(HU1) corresponding to this. Therefore, a length in theX-direction of the conductive layer 110 functioning as the drain-sideselect gate line SGD is smaller than a half length in the X-direction ofthe conductive layer 110 functioning as the word line WL or the like.The plurality of conductive layers 110 functioning as the drain-sideselect gate lines SGD are each electrically independent for every stringunit SU.

For example, as illustrated in FIG. 13 , the semiconductor columns 120are arranged in a predetermined pattern in the X-direction and theY-direction. The semiconductor columns 120 function as channel regionsof the plurality of memory cells MC and the select transistors (STD,STS) included in one memory string MS (FIG. 3 ). The semiconductorcolumn 120 is, for example, a semiconductor layer, such aspolycrystalline silicon (Si). The semiconductor column 120 has, forexample, a substantially cylindrical shape and includes an insulatinglayer 125 (FIG. 14 ), such as silicon oxide, at its center part. Each ofthe outer peripheral surfaces of the semiconductor columns 120 issurrounded by the conductive layers 110 and is opposed to the conductivelayers 110.

An impurity region containing N-type impurities, such as phosphorus (P),is disposed on the upper end portion of the semiconductor column 120.This impurity region is connected to the bit line BLa or the bit lineBLf via a contact Ch and a contact Vy (FIG. 9 ).

An impurity region containing N-type impurities, such as phosphorus (P),is disposed on the lower end portion of the semiconductor column 120.This impurity region is connected to the conductive layer 112 (FIG. 9 ).

The gate insulating film 130 (FIG. 14 ) has a substantially cylindricalshape that covers the outer peripheral surface of the semiconductorcolumn 120. The gate insulating film 130 includes, for example, asillustrated in FIG. 14 , a tunnel insulating film 131, an electriccharge accumulating film 132, and a block insulating film 133, which arestacked between the semiconductor column 120 and the conductive layers110. The tunnel insulating film 131 and the block insulating film 133are, for example, insulating films of silicon oxide (SiO₂) or the like.The electric charge accumulating film 132 is, for example, a film thatcan accumulate an electric charge. The electric charge accumulating film132 is, for example, a film of silicon nitride (Si₃N₄) or the like. Thetunnel insulating film 131, the electric charge accumulating film 132,and the block insulating film 133, which have substantially cylindricalshapes, extend in the Z-direction along the outer peripheral surface ofthe semiconductor column 120.

FIG. 14 illustrates an example in which the gate insulating film 130includes the electric charge accumulating film 132 of silicon nitride orthe like. However, the gate insulating film 130 may include, forexample, a floating gate of polycrystalline silicon containing N-type orP-type impurities or the like.

[Structure of Memory Cell Array Layer L_(MCA) in First Hook-Up RegionR_(HU1)]

As illustrated in FIG. 11 , in the first hook-up region R_(HU1), contactconnection sub-regions r_(CC1) each corresponding to the memory blockBLK is disposed. Contact connection sub-regions r_(C4T) are disposed inregions corresponding to the memory blocks BLKf.

As illustrated in FIG. 12 , in the contact connection sub-regionr_(CC1), the end portions in the X-direction of the plurality ofconductive layers 110 functioning as the drain-side select gate linesSGD are disposed. Additionally, in the contact connection sub-regionr_(CC1), a plurality of contacts CC arranged in a matrix viewed from theZ-direction are disposed. The plurality of contacts CC extend in theZ-direction, and have lower ends connected to the conductive layers 110.The contacts CC may, for example, include a stacked film of a barrierconductive film, such as titanium nitride (TiN), and a metal film, suchas tungsten (W), or the like.

Among the plurality of contacts CC arranged in the X-direction, thecontact CC closest to the memory hole region R_(MH) is connected to thefirst conductive layer 110 counted from above. Further, the contact CCsecond closest to the memory hole region R_(MH) is connected to thesecond conductive layer 110 counted from above. Hereinafter, similarly,the contact CC a-th (a is a positive integer of 1 or more) closest tothe memory hole region R_(MH) is connected to the a-th conductive layer110 counted from above. The plurality of contacts CC are connected todrain electrodes of the transistors Tr via wirings m0 in the wiringlayer M0, the wirings d0, d1, d2 in the wiring layers D0, D1, D2, andthe contacts CS.

For example, as illustrated in FIG. 12 , supporting structures HRdisposed near the contacts CC are disposed in the first hook-up regionR_(HU1). The supporting structure HR extends in the Z-direction and isconnected to the conductive layer 112 at the lower end. The supportingstructure HR includes, for example, an insulating layer, such as siliconoxide (SiO₂).

In the contact connection sub-region r_(C4T), two insulating layersST_(O) arranged in the Y-direction are disposed. The two insulatinglayers ST_(O) are disposed between the two inter-block insulating layersST arranged in the Y-direction. For example, as illustrated in FIG. 9and FIG. 12 , between the two insulating layers ST_(O), a plurality ofinsulating layers 110A arranged in the Z-direction and a plurality ofcontacts C4 extending in the Z-direction are disposed.

The insulating layers ST_(O)(FIG. 12 ) extend in the X-direction and theZ-direction and have lower ends connected to the conductive layers 112.The insulating layer ST_(O) contains, for example, silicon oxide (SiO₂).

The insulating layer 110A is a substantially plate-shaped insulatinglayer extending in the X-direction. The insulating layer 110A mayinclude an insulating layer of silicon nitride (Si₃N₄) or the like.Between the plurality of insulating layers 110A arranged in theZ-direction, insulating layers of silicon oxide (SiO₂) or the like aredisposed.

The plurality of contacts C4 are arranged in the X-direction. Thecontact C4 may include a stacked film of a barrier conductive film, suchas titanium nitride (TiN), and a metal film, such as tungsten (W), orthe like. For example, as illustrated in FIG. 9 , outer peripheralsurfaces of the contacts C4 are each surrounded by the insulating layers110A and are connected to the insulating layers 110A. For example, asillustrated in FIG. 9 , the contact C4 extends in the Z-direction, hasan upper end connected to the wiring m0 in the wiring layer M0 and alower end connected to the wiring d2 in the wiring layer D2.

As illustrated in FIG. 11 , the two memory blocks BLKa, BLKf adjacent inthe Y-direction each include the contact connection sub-region r_(CC1).The plurality of respective contacts CC in the two contact connectionsub-regions r_(CC1) are connected to the plurality of contacts C4 in thecontact connection sub-region r_(C4T) (FIG. 11 ) corresponding to onememory block BLKf via the wirings m0 (FIG. 9 ).

[Structure of Memory Cell Array Layer L_(MCA) in Second Hook-Up RegionR_(HU2)]

As illustrated in FIG. 10 , in a region at one side in the X-direction(for example, the X-direction negative side in FIG. 10 ) in the secondhook-up region R_(HU2), a plurality of contact connection sub-regionsr_(CC2) and a plurality of contact connection sub-regions r_(C4T) aredisposed. The plurality of contact connection sub-regions r_(CC2) aredisposed at positions corresponding to the memory block BLKa. Theplurality of contact connection sub-regions r_(C4T) are disposed atpositions corresponding to the memory block BLKf.

As illustrated in FIG. 10 , in a region at the other side in theX-direction (for example, the X-direction positive side in FIG. 10 ) inthe second hook-up region R_(HU2), the plurality of contact connectionsub-region r_(CC2) and the plurality of contact connection sub-regionsr_(C4T) are disposed as well. The plurality of contact connectionsub-regions r_(CC2) are disposed at positions corresponding to thememory block BLKf. The plurality of contact connection sub-regionsr_(C4T) are disposed at positions corresponding to the memory blockBLKa.

As illustrated in FIG. 11 , the contact connection sub-region r_(CC2)includes a part of the plurality of conductive layers 110 functioning asthe word lines WL or the source-side select gate lines SGS. The contactconnection sub-region r_(CC2) includes the plurality of contacts CCarranged in the X-direction. For example, as illustrated in FIG. 9 , theplurality of contacts CC extend in the Z-direction and have lower endsconnected to the conductive layers 110. The contacts CC may, forexample, include a stacked film of a barrier conductive film, such astitanium nitride (TiN), and a metal film, such as tungsten (W), or thelike.

Among the plurality of contacts CC arranged in the X-direction, thecontact CC closest to the memory hole region R_(MH) is connected to thefirst conductive layer 110 counted from the lower side. Further, thecontact CC second closest to the memory hole region R_(MH) is connectedto the second conductive layer 110 counted from the lower side.Hereinafter, similarly, the contact CC b-th (b is a positive integer of1 or more) closest to the memory hole region R_(MH) is connected to theb-th conductive layer 110 counted from the lower side. The plurality ofcontacts CC are connected to the drain electrodes of the transistors Trvia the wirings m0 in the wiring layer M0, the wirings d0, d1, d2 in thewiring layers D0, D1, D2, and the contacts CS.

The contacts CC in the contact connection sub-region r_(CC2)corresponding to the memory block BLKa (FIG. 10 ) are each connected tothe contact C4 in the contact connection sub-region r_(C4T)corresponding to the memory block BLKf adjacent to the memory block BLKavia the wiring m0 (FIG. 9 ) extending in the Y-direction. Moreover, thecontacts CC in the contact connection sub-region r_(CC2) correspondingto the memory block BLKf are each connected to the contact C4 in thecontact connection sub-region r_(C4T) corresponding to the memory blockBLKa adjacent to the memory block BLKf via the wiring m0 (FIG. 9 )extending in the Y-direction.

The configuration allows comparatively shortening a distance between thecontact CC and the contact C4 connected to the contact CC. Accordingly,a complicated wiring pattern of the wirings m0 in the wiring layer M0can be reduced. In the configuration illustrated in FIG. 10 as anexample, the contact connection sub-regions r_(CC2) are formed acrossthe two adjacent memory blocks BLK in the Y-direction. Here, forexample, in FIG. 10 , it is considered that the contact connectionsub-regions r_(CC2) are disposed at a position corresponding to the2n_(B)-th memory block BLK counted from the Y-direction negative side ina region at the X-direction negative side of the second hook-up regionR_(HU2), and at a position corresponding to the 2n_(B)+1-th memory blockBLK counted from the Y-direction negative side in a region at theX-direction positive side of the second hook-up region R_(HU2). Thestructure as illustrated in FIG. 10 as an example is easilymanufacturable compared with such a structure.

As illustrated in FIG. 15 , the plurality of transistors Tr are disposedin the transistor layer L_(TR) described above. In the example of FIG.15 , a plurality of transistor rows arranged in the Y-direction aredisposed corresponding to the plurality of memory blocks BLK arranged inthe Y-direction. The transistor rows each include the plurality oftransistors Tr arranged in the X-direction.

In the example of FIG. 15 , the plurality of transistors Tr are disposedat positions corresponding to the contact connection sub-region r_(CC2)(see FIG. 10 ) including the contacts CC connected to the memory blockBLK_(A). Additionally, the plurality of transistors Tr are disposed atpositions corresponding to the contact connection sub-region r_(C4T)(see FIG. 10 ) including the contacts C4 connected to the memory blockBLK_(A). The plurality of transistors Tr are each electrically connectedto the word lines WL and the select gate lines (SGD, SGS) in the memoryblock BLKa and function as the plurality of transistors T_(BLK) (FIG. 3).

Similarly, in the example of FIG. 15 , the plurality of transistors Trare disposed at the positions corresponding to the contact connectionsub-region r_(CC2) including the contacts CC connected to any of thememory blocks BLK. Additionally, the plurality of transistors Tr aredisposed at the positions corresponding to the contact connectionsub-region r_(C4T) including the contacts C4 connected to this memoryblock BLK.

The plurality of transistors Tr are each electrically connected to theword lines WL and the select gate lines (SGD, SGS) in this memory blockBLK to function as the plurality of transistors T_(BLK) (FIG. 3 ).

The configuration allows comparatively shortening a distance between thecontact C4, which is illustrated in FIG. 10 as an example, and thetransistor Tr, which is illustrated in FIG. 15 as an example.Accordingly, a complicated wiring pattern of the wirings d0, d1, d2 inthe wiring layers D0, D1, D2 can be reduced. In the configurationillustrated in FIG. 15 as an example, drain regions of the plurality oftransistors Tr corresponding to the same memory block BLK are adjacentvia the insulating regions 100I in the X-direction and the Y-direction.The configuration allows reducing a voltage difference between the drainregions of the two adjacent transistors Tr in the X-direction or theY-direction. Therefore, while a withstand voltage between thetransistors Tr is ensured, an area of the insulating region 100I can bereduced.

[Structure of Wiring Layer M0]

As illustrated in FIG. 9 , for example, a plurality of wirings includedin the wiring layer M0 are electrically connected to at least one of theconfiguration in the memory cell array layer L_(MCA) and theconfiguration in the transistor layer L_(TR).

The wiring layer M0 includes the plurality of wirings m0. The pluralityof wirings m0 may include, for example, a stacked film of a barrierconductive film, such as titanium nitride (TiN) or tantalum nitride(TaN) and a metal film, such as tungsten (W) or copper (Cu), or thelike. Note that a part of the plurality of wirings m0 function as thebit lines BLa, BLf (FIG. 3 ). For example, as illustrated in FIG. 13 ,the bit lines BLa are arranged in the X-direction and extend in theY-direction. Additionally, the plurality of bit lines BLa are eachconnected to one semiconductor column 120 included in each string unitSU. Although the illustration is omitted, similarly to the bit linesBLa, the bit lines BLf are arranged in the X-direction and extend in theY-direction. Similarly to the bit lines BLa, the bit lines BLf are eachconnected to one semiconductor column 120 included in each string unitSU.

[Threshold Voltage of Memory Cell MC]

Next, with reference to FIG. 16A, FIG. 16B, and FIG. 16C, the thresholdvoltage of the memory cell MC will be described.

FIG. 16A is a schematic histogram for describing the threshold voltageof the memory cell MC in which 3-bit data is stored. The horizontal axisindicates the voltage of the word line WL, and the vertical axisindicates the number of memory cells MC. FIG. 16B is a table showing anexample of a relation between the threshold voltage of the memory cellMC in which the 3-bit data is stored and the stored data. FIG. 16C is atable showing another example of the relation between the thresholdvoltage of the memory cell MC in which the 3-bit data is stored and thestored data.

In the example of FIG. 16A, the threshold voltages of the memory cellsMC are controlled in states of eight patterns. The threshold voltage ofthe memory cell MC controlled in an Er state is smaller than an eraseverify voltage V_(VFYEr). For example, the threshold voltage of thememory cell MC controlled in an A state is larger than a verify voltageV_(VFYA) and smaller than a verify voltage V_(VFYB). Additionally, forexample, the threshold voltage of the memory cell MC controlled in a Bstate is larger than the verify voltage V_(VFYB) and smaller than averify voltage V_(VFYC). Hereinafter, similarly, the threshold voltagesof the memory cells MC controlled in a C state to an F state are largerthan the verify voltage V_(VFYC) to a verify voltage V_(VFYF) andsmaller than a verify voltage V_(VFYD) to a verify voltage V_(VFYG),respectively. For example, the threshold voltage of the memory cell MCcontrolled in a G state is larger than the verify voltage V_(VFYG) andsmaller than a read pass voltage V_(READ).

In the example of FIG. 16A, a read voltage V_(CGAR) is set between athreshold distribution corresponding to the Er state and a thresholddistribution corresponding to the A state. A read voltage V_(CGBR) isset between a threshold distribution corresponding to the A state and athreshold distribution corresponding to the B state. Hereinafter,similarly, the read voltage V_(CGCR) to a read voltage V_(CGCR) are setbetween a threshold distribution corresponding to the B state and athreshold distribution corresponding to the C state, and between athreshold distribution corresponding to the F state and a thresholddistribution corresponding to the G state, respectively.

For example, the Er state corresponds to the lowest threshold voltage(the threshold voltage of the memory cell MC in the erase state). Forexample, data “111” is assigned to the memory cell MC corresponding tothe Er state.

The A state corresponds to the threshold voltage higher than thethreshold voltage corresponding to the Er state. For example, data “101”is assigned to the memory cell MC corresponding to the A state.

The B state corresponds to the threshold voltage higher than thethreshold voltage corresponding to the A state. For example, data “001”is assigned to the memory cell MC corresponding to the B state.

Hereinafter, similarly, the C state to the G state in the drawingcorrespond to threshold voltages higher than threshold voltagescorresponding to the B state to the F state. For example, data “011”,“010”, “110”, “100”, and “000” are assigned to the memory cells MCcorresponding to these distributions.

In the case of the assignment as exemplified in FIG. 16B, the data of alow-order bit is distinguishable with one read voltage V_(CGDR). Thedata of a middle-order bit is distinguishable with three read voltagesV_(CCAR), V_(CCCR), V_(CCFR). The data of a high-order bit isdistinguishable with three read voltages V_(CGBR), V_(CGER), V_(CGGR).Such an assignment of the data is referred to as a 1-3-3 code in somecases.

The number of bits of the data stored in the memory cell MC, the numberof states, the assignment of the data to each state, and the like arechangeable as necessary.

For example, in the case of the assignment as exemplified in FIG. 16C,the data of the low-order bit is distinguishable with one read voltageV_(CGDR). The data of the middle-order bit is distinguishable with thetwo read voltages V_(CGBR), V_(CG)FR. The data of the high-order bit isdistinguishable with the four read voltages V_(CGAR), V_(CGCR),V_(CGFR), V_(CGGR). Such an assignment of the data is referred to as a1-2-4 code in some cases.

For example, in a case where one-bit data is stored in the memory cellMC, the threshold voltage of the memory cell MC is controlled in twopatterns. For example, in a case where two-bit data is stored in thememory cell MC, the threshold voltage of the memory cell MC iscontrolled in four patterns. Hereinafter, similarly, in a case wheren_(T) (n_(T) is a positive integer of 4 or more) bit data is stored inthe memory cell MC, the threshold voltage of the memory cell MC iscontrolled in 2^(nT) patterns.

[Read Operation]

Next, the read operation of the semiconductor memory device according tothis embodiment will be described. In the following description, anexample in which data are assigned to the memory cells MC in the aspectas illustrated in FIG. 16B as an example will be described.

[Read Operation of Low-Order Bit]

FIG. 17 is a schematic waveform diagram for describing the readoperation of the low-order bit. FIG. 18 is a schematic plan view fordescribing the read operation. FIG. 19 and FIG. 20 are schematiccross-sectional views for describing the read operation. FIG. 19illustrates the Y-Z cross-sectional surface along the bit line BLa, andFIG. 20 illustrates the Y-Z cross-sectional surface along the bit lineBLf. FIG. 18 to FIG. 20 illustrate an example in which the readoperation is simultaneously performed on the memory cell MC in a stringunit SUc and the memory cell MC in a string unit SUh in the memory blockBLK_(A).

In the following description, the word line WL that is a target of theoperation may be referred to as “selected word line WL_(S)” and the wordline WL other than the target of the operation may be referred to as“unselected word line WL_(U)”. In the following description, an examplewhere the read operation is performed on the memory cells MC connectedto the selected word line WL_(S) (hereinafter sometimes referred to as“selected memory cell MC”) among the plurality of memory cells MCincluded in the string unit SU target of the operation will bedescribed. In the following description, the configuration includingsuch a plurality of selected memory cells MC may be referred to as aselected page PG.

At timing t100 in the read operation, for example, as illustrated inFIG. 17 , a signal of the ready/busy terminal RY/(/BY) switches from the“H” state to the “L” state.

At timing t101 in the read operation, the read pass voltage V_(READ) issupplied to the unselected word lines WL_(U) to set all of theunselected memory cells MC in an ON state. For example, as illustratedin FIG. 19 and FIG. 20 , a voltage V_(SG) is supplied to the select gatelines (SGD, SGS) corresponding to the selected page PG and the groundvoltage V_(SS) is supplied to the other select gate lines (SGD, SGS).The voltage V_(SG) has a magnitude to the extent in which an electronchannel is formed in the channel region of the select transistor (STD,STS) and this sets the select transistor (STD, STS) in the ON state.

For example, as illustrated in FIG. 17 , the read voltage V_(CGDR) issupplied to the selected word line WL_(S) at timing t102 in the readoperation. This sets the selected memory cells MC in the Er state to theC state in the ON state and sets the remaining selected memory cells MCin the OFF state.

At the timing t102, for example, the bit lines BLa, BLf, and the sensenode SEN are charged, for example. For example, the latch circuit SDL inFIG. 7 is caused to latch “H” to set states of the signal lines STB,XXL, BLC, BLS, HLL, BLX to “L, L, H, H, H, H”. Thus, the voltage V_(DD)is supplied to the bit lines BLa, BLf and the sense node SEN, andcharging of them starts. For example, the voltage V_(SRC) is supplied tothe source line SL (FIG. 3 ) to start charging them. The voltageV_(SRC), for example, has a magnitude to the same extent of the groundvoltage V_(SS). The voltage V_(SRC) is, for example, larger than theground voltage V_(SS) and smaller than the voltage V_(DD).

For example, as illustrated in FIG. 17 , at timing t103 to timing t104in the read operation, a sense operation is performed. For example, thesense amplifier module SAM (FIG. 1 ) detects the ON state/OFF state ofthe selected memory cell MC and acquires data indicative of the state ofthis memory cell MC. For example, in a state where the voltage V_(DD) issupplied to the bit lines BLa, BLf, the state of the signal line XXL isset to “H” for a certain period. Accordingly, the sense node SEN in thesense amplifier SA (FIG. 7 ) is electrically conducted with the bitlines BLa, BLf for the certain period. After performing the senseoperation, the state of the signal line STB is temporarily set to “H”.Accordingly, the sense transistor 41 is electrically conduced with thewiring LBUS (FIG. 7 ) and electric charges of the wiring LBUS aredischarged or maintained. Additionally, any of the latch circuits in thesense amplifier unit SAU electrically conducts with the wiring LBUS, andthis latch circuit latches the data of the wiring LBUS.

At timing t105 in the read operation, the ground voltage V_(SS) issupplied to the selected word line WL_(S), the unselected word linesWL_(U), and the select gate lines (SGD, SGS).

At timing t106 in the read operation, for example, as illustrated inFIG. 17 , the signal of the ready/busy terminal RY/(/BY) switches fromthe “L” state to the “H” state.

In the read operation of the low-order bit, the data indicative of thestate of the selected memory cell MC is data stored in the memory cellMC. This data is transferred to the cache memory CM (FIG. 1 ) via thewiring LBUS (FIG. 7 ), the switch transistor DSW, and the wiring DBUS.

[Read Operation of Middle-Order Bit]

FIG. 21 is a schematic waveform diagram for describing the readoperation of the middle-order bit.

Operations at timing t120 to timing t124 in the read operation of themiddle-order bit are performed similarly to the operations at the timingt100 to the timing t104 in the read operation of the low-order bit.However, at timing t122, the read voltage V_(CGAR) is supplied to theselected word line WL_(S). Thus, the selected memory cells MC in the Erstate enter the ON state and the remaining selected memory cells MCenter the OFF state.

Operations at timing t125 to timing t127 in the read operation of themiddle-order bit are performed similarly to the operations at the timingt102 to the timing t104 in the read operation of the low-order bit.However, at timing t125, the read voltage V_(CGCR) is supplied to theselected word line WL_(S). Thus, the selected memory cells MC in the Erstate to the B state enter the ON state, and the remaining selectedmemory cells MC enter the OFF state.

Operations at timing t128 to timing t130 in the read operation of themiddle-order bit are performed similarly to the operations at the timingt102 to the timing t104 in the read operation of the low-order bit.However, at timing t128, the read voltage V_(CGFR) is supplied to theselected word line WL_(S). Thus, the selected memory cells MC in the Erstate to the E state enter the ON state and the remaining selectedmemory cells MC enter the OFF state.

Operations at timing t131 to timing t132 in the read operation of themiddle-order bit are performed similarly to the operations at the timingt105 to the timing t106 in the read operation of the low-order bit.

In the read operation of the middle-order bit, an arithmetic operation,such as exclusive OR, is performed on three pieces of data indicative ofthe states of the selected memory cells MC, and thus the data stored inthe selected memory cells MC are calculated. This data is transferred tothe cache memory CM via the wiring LBUS (FIG. 7 ), the switch transistorDSW, and the wiring DBUS.

[Read Operation of High-Order Bit]

FIG. 22 is a schematic waveform diagram for describing the readoperation of the high-order bit.

Operations at timing t140 to timing t144 in the read operation of thehigh-order bit are performed similarly to the operations at the timingt100 to the timing t104 in the read operation of the low-order bit.However, at timing t142, the read voltage V_(CGBR) is supplied to theselected word line WL_(S). Thus, the selected memory cells MC in the Erstate and the A state enter the ON state, and the remaining selectedmemory cells MC enter the OFF state.

Operations at timing t145 to timing t147 in the read operation of thehigh-order bit are performed similarly to the operations at the timingt102 to the timing t104 in the read operation of the low-order bit.However, at timing t145, the read voltage V_(CCER) is supplied to theselected word line WL_(S). Thus, the selected memory cells MC in the Erstate to the D state enter the ON state, and the remaining selectedmemory cells MC enter the OFF state.

Operations at timing t148 to timing t150 in the read operation of thehigh-order bit are performed similarly to the operations at the timingt102 to the timing t104 in the read operation of the low-order bit.However, at timing t148, the read voltage V_(CGGR) is supplied to theselected word line WL_(S). Thus, the selected memory cells MC in the Erstate to the F state enter the ON state and the selected memory cells MCin the G state enter the OFF state.

Operations at timing t151 to timing t152 in the read operation of thehigh-order bit are performed similarly to the operations at the timingt105 to the timing t106 in the read operation of the low-order bit.

In the read operation of the high-order bit, an arithmetic operation,such as exclusive OR, is performed on three pieces of data indicative ofthe states of the selected memory cells MC, and thus the data stored inthe selected memory cells MC are calculated. This data is transferred tothe cache memory CM via the wiring LBUS (FIG. 7 ), the switch transistorDSW, and the wiring DBUS.

[Designation of Selected Page PG]

As described with reference to FIG. 1 and the like, the memory die MDaccording to this embodiment can simultaneously select the twodrain-side select gate lines SGD according to the two string addressesA_(SU) in the address register ADR. One of these two drain-side selectgate line is one of the drain-side select gate line SGDa to thedrain-side select gate line SGDe. The other one of these two drain-sideselect gate lines is one of the drain-side select gate line SGDf to thedrain-side select gate line SGDj. Therefore, for example, as illustratedin FIG. 18 to FIG. 20 as an example, the read operation can besimultaneously performed on the memory cells MC in the string unit SUcand the memory cells MC in the string unit SUh in the memory blockBLK_(A). For example, as illustrated in FIG. 23 , FIG. 19 , and FIG. 24as an example, the read operation can be simultaneously performed on thememory cells MC in the string unit SUc and the memory cells MC in thestring unit SUj in the memory block BLK_(A).

In performing the read operation, a command set including command dataand address data is input from the controller die (not illustrated) tothe memory die MD.

In performing the read operation, for example, one command set andanother command set may be input to the memory die MD. In this case, onecommand set may include one string address A_(SU) (FIG. 1 ). Anothercommand set may include another string address A_(SU) (FIG. 1 ). In thiscase, another command set may include data other than the string addressA_(SU) or need not include the data. Another command set may includedata that designates the memory cell array region R_(MCA) (FIG. 8 ), theblock address A_(DLK) (FIG. 1 ), the word line address A_(WL) (FIG. 1 ),data that designates the low-order bit, the middle-order bit, or thehigh-order bit, and the like. In this case, the data may match the dataincluded in the one command set.

In performing the read operation, for example, the command set includingone string address A_(SU) (FIG. 1 ) and another string address A_(SU)(FIG. 1 ) may be input to the memory die MD.

Effects of First Embodiment

As described above, in this embodiment, a part of the plurality ofconductive layers 110 function as the word lines WL and another part ofthe conductive layers 110 function as the drain-side select gate linesSGD. In this embodiment, the length in the X-direction of the conductivelayer 110 functioning as the drain-side select gate line SGD is smallerthan the half length in the X-direction of the conductive layer 110functioning as the word line WL or the like. In this embodiment, the tworespective conductive layers 110 arranged in the X-direction function asthe drain-side select gate lines SGD corresponding to the differentstring units SU. These two respective conductive layers 110 areconnected to the different transistors T_(BLK).

Here, it is considered that the length in the X-direction of theconductive layer 110 functioning as the drain-side select gate line SGDis configured to be the same extent as the length in the X-direction ofthe conductive layer 110 functioning as the word line WL or the like.Hereinafter, the configuration example is referred to as a comparativeexample. Compared with the first embodiment, a data volume in theselected page PG increases in the comparative example. For example, in acase where the lengths in the X-direction of the conductive layers 110functioning as the word lines WL are same extent, the data volume in theselected page PG in the comparative example is around double of the datavolume in the selected page PG in the first embodiment.

Here, in the read operation, a data size of the read data is smallerthan a data size possible to store in the selected page PG in somecases. In the read operation, the data stored in a plurality of pagesneed to be sequentially read in some cases.

In this case, in the comparative example, the data in one selected pagePG is read by one-time read operation. Therefore, for example, to readeight pieces of data, the read operation needs to be performed eighttimes.

On the other hand, in the first embodiment, the data in the two selectedpages PG can be read by one time read operation. Accordingly, forexample, to sequentially read eight pieces of data, the count ofperforming the read operation can be reduced to seven times or less insome cases.

For example, at least two pieces of data among the eight pieces of dataare stored in the same memory block BLK in some cases. One of the twopieces of data is stored in any of the string unit SUa to the stringunit SUe in some cases. The other data among the two pieces of data isstored in any of the string unit SUf to the string unit SUj in somecases. In such a case, the count of performing the read operation can bereduced to seven times or less.

Therefore, according to the first embodiment, the semiconductor memorydevice that operates at high speed can be provided.

Second Embodiment

Next, with reference to FIG. 25 and FIG. 26 , a memory die MD2 accordingto the second embodiment will be described. FIG. 25 is a schematic blockdiagram illustrating a configuration of the memory die MD2 according tothe second embodiment. FIG. 26 is a schematic circuit diagramillustrating a part of the configuration of the memory die MD2.

As illustrated in FIG. 25 and FIG. 26 , the memory die MD2 according tothe second embodiment is configured basically similarly to the memorydie MD according to the first embodiment.

However, as described with reference to FIG. 2 and the like, the memorydie MD according to the first embodiment includes the wirings CG_(WL)and the wirings CG_(SG)D. The respective wirings CG_(WL) and wiringsCG_(SGD) are connected to all of the block decode units blkd, andelectrically connected to the word lines WL or the drain-side selectgate lines SGD included in all of the memory blocks BLK.

Meanwhile, as illustrated in FIG. 26 , the memory die MD2 according tothe second embodiment includes wirings CG_(WL0), CG_(WL1) and wiringsCG_(SGD0), CG_(SGD1) instead of the wirings CG_(WL) and the wiringsCG_(SGD). For example, as illustrated in FIG. 15 , the memory die MD2according to the second embodiment also includes the transistors T_(BLK)corresponding to the memory block BLKa in the region at one side in theX-direction (for example, the X-direction negative side in FIG. 15 ) inthe second hook-up region R_(HU2) in the transistor layer L_(TR). Thetransistors T_(DLK) corresponding to the memory block BLKf are disposedin the region at the other side in the X-direction (for example, theX-direction positive side in FIG. 15 ) in the second hook-up regionR_(HU2). The wirings CG_(WL0), CG_(SCD0) according to this embodimentare connected to the plurality of transistors T_(BLK) disposed in aregion at one side in the X-direction (for example, the X-directionnegative side in FIG. 15 ), and are electrically connected to the wordlines WL or the drain-side select gate lines SGD included in the memoryblock BLKa. The wirings CG_(WL1), CG_(SGD1) according to this embodimentare connected to the plurality of transistors T_(BLK) disposed in aregion at the other side in the X-direction (for example, theX-direction positive side in FIG. 15 ) and electrically connected to theword lines WL or the drain-side select gate lines SGD included in thememory block BLKf.

As illustrated in FIG. 25 , the memory die MD2 according to the secondembodiment does not include the block decoder BLKD, the word linedecoder WLD, or the drain-side select gate line decoders SGDD accordingto the first embodiment. Instead of them, the memory die MD2 accordingto the second embodiment includes block decoders BLKD0, BLKD1, word linedecoders WLD0, WLD1, and drain-side select gate line decoders SGDD0,SGDD1.

The block decoders BLKD0, BLKD1 are configured basically similarly tothe block decoder BLKD according to the first embodiment. However, theconfiguration in the block decoder BLKD0 is connected to not the wordlines WL or the drain-side select gate lines SGD corresponding to all ofthe memory blocks BLK but the word lines WL and the drain-side selectgate lines SGD corresponding to the memory blocks BLKa. Instead of thewiring CG_(WL) and the wiring CG_(SGD), the configuration in the blockdecoder BLKD0 is connected to the wiring CG_(WL0) and the wiringCG_(SCD0). Additionally, the configuration in the block decoder BLKD1 isconnected to, not the word lines WL or the drain-side select gate linesSGD corresponding to all of the memory blocks BLK, but the word lines WLand the drain-side select gate lines SGD corresponding to the memoryblocks BLKf. Instead of the wiring CG_(WL) and the wiring CG_(SCD), theconfiguration in the block decoder BLKD1 is connected to the wiringCG_(WL1) and the wiring CG_(SGD1).

The address register ADR according to this embodiment is configured tosimultaneously latch at least the two block addresses A_(BLK). One blockaddress A_(BLK) corresponds to one of the memory blocks BLKa. The blockdecoder BLKD0 is configured to select one of the memory blocks BLKaaccording to this block address A_(BLK). The other block address A_(BLK)corresponds to one of the memory blocks BLKf. The block decoder BLKD1 isconfigured to select one of the memory blocks BLKf according to thisblock address A_(BLK).

The word line decoders WLD0, WLD1 are configured basically similarly tothe word line decoder WLD according to the first embodiment. However,the respective configurations in the word line decoder WLD0 areconnected to the wiring CG_(WL0), instead of the wiring CG_(WL).Additionally, the respective configurations in the word line decoderWLD1 are connected to the wiring CG_(WL1), instead of the wiringCG_(WL).

In the example of FIG. 25 , the address register ADR is configured tolatch at least one word line address A_(WL). The word line decodersWLD0, WLD1 are configured to select one of the plurality of word linesWL corresponding to the respective memory blocks BLK according to thisword line address A_(WL). Therefore, the wordlines WL disposed at thesame height position are selected in the memory block BLK correspondingto the word line decoder WLD0 and the memory block BLK corresponding tothe word line decoder WLD1.

In the example of FIG. 25 , the wiring CG_(S) corresponding to the wordline decoder WLD0 and the wiring CG_(S) corresponding to the word linedecoder WLD1 are connected to the common driver unit drv (see FIG. 4 ).In the example of FIG. 25 , the wiring CG_(U) corresponding to the wordline decoder WLD0 and the wiring CG_(U) corresponding to the word linedecoder WLD1 are connected to the common driver unit dry (see FIG. 4 ).Therefore, the same voltage is supplied to the selected word line WLselected by the block decoder BLKD0 and the word line decoder WLD0 andthe selected word line WL selected by the block decoder BLKD1 and theword line decoder WLD1. Similarly, the same voltage is supplied to theunselected word lines WL corresponding to them.

The drain-side select gate line decoders SGDD0, SGDD1 each include aconfiguration of selecting one of the drain-side select gate line SGDato the drain-side select gate line SGDe and a configuration of selectingone of the drain-side select gate line SGDf to the drain-side selectgate line SGDj. These configurations are each configured similarly tothe drain-side select gate line decoder SGDD according to the firstembodiment. The respective configurations in the drain-side select gateline decoder SGDD0 are connected to the wiring CG_(SGD0), instead of thewiring CG_(SGD). The respective configurations in the drain-side selectgate line decoder SGDD1 are connected to the wiring CG_(SCD1), insteadof the wiring CG_(SCD).

The address register ADR according to this embodiment is configured tosimultaneously latch at least two string addresses A_(SU). One stringaddress A_(SU) corresponds to one of the string unit SUa to the stringunit SUe. The drain-side select gate line decoders SGDD0, SGDD1 areconfigured to select one of the plurality of drain-side select gate lineSGDa to drain-side select gate line SGDe according to this stringaddress A_(SU). The other string address A_(SU) corresponds to one ofthe string unit SUf to the string unit SUj. The drain-side select gateline decoders SGDD0, SGDD1 are configured to select one of the pluralityof drain-side select gate line SGDf to drain-side select gate line SGDjaccording to this string address A_(SU).

In the example of FIG. 25 , the wiring CG_(S) corresponding to thedrain-side select gate line decoder SGDD0 and the wiring CG_(S)corresponding to the drain-side select gate line decoder SGDD1 areconnected to the common driver unit drv (see FIG. 4 ). In the example ofFIG. 25 , the wiring CG_(U) corresponding to the drain-side select gateline decoder SGDD0 and the wiring CG_(U) corresponding to the drain-sideselect gate line decoder SGDD1 are connected to the common driver unitdry (see FIG. 4 ). Therefore, the same voltage is supplied to theselected drain-side select gate line SGD selected by the drain-sideselect gate line decoder SGDD0 and the selected drain-side select gateline SGD selected by the drain-side select gate line decoder SGDD1.Similarly, the same voltage is supplied to the unselected drain-sideselect gate lines SGD corresponding to them.

[Read Operation]

Next, the read operation of the semiconductor memory device according tothis embodiment will be described.

The semiconductor memory device according to the second embodiment canperform the read operations performable in the semiconductor memorydevice according to the first embodiment.

The semiconductor memory device according to the second embodiment cansimultaneously perform the read operation on one selected page PGincluded in one of the memory blocks BLKa and one selected page PGincluded in one of the memory blocks BLKf. In this case, the selectedpage PG included in one of the string unit SUa to the string unit SUeand the string unit SUf to the string unit SUj in the memory block BLKais selected. In the memory block BLKf, the selected page PG included inthe other of the string unit SUa to string unit SUe and string unit SUfto string unit SUj is selected.

For example, in the example of FIG. 27 and FIG. 28 , the memory blockBLK_(A) is selected as one of the memory blocks BLKa and the memoryblock BLK_(B) is selected as one of the memory blocks BLKf. The selectedpage PG in the string unit SUc in the memory block BLK_(A) is selected,and the selected page PG in the string unit SUi in the memory blockBLK_(B) is selected.

In performing the read operation, the command set is input from thecontroller die (not illustrated) to the memory die MD2.

In performing the read operation, for example, one command set andanother command set may be input to the memory die MD2. In this case,one command set may include one string address A_(SU) (FIG. 25 ) and oneblock address A_(BLK). (FIG. 25 ). Another command set may includeanother string address A_(SU) (FIG. 25 ) and another block addressA_(BLK) (FIG. 25 ). In this case, another command set may include dataother than the string address A_(SU) or the block address A_(BLK) orneed not include the data. Another command set may include data thatdesignates the memory cell array region R_(MCA) (FIG. 8 ), the word lineaddress A_(WL) (FIG. 25 ), data that designates the low-order bit, themiddle-order bit, or the high-order bit, and the like. In this case, thedata may match the data included in the one command set.

In performing the read operation, for example, one command set may beinput to the memory die MD2. This command set may include, for example,one string address A_(SU) (FIG. 25 ) and one block address A_(BLK) (FIG.25 ). This command set, for example, may include another string addressA_(SU) (FIG. 25 ) and another block address A_(BLK) (FIG. 25 ).

Effects of Second Embodiment

The semiconductor memory device according to the second embodiment canread the data in the two selected pages PG corresponding to the twomemory blocks BLK by one-time read operation. Therefore, when aplurality of pieces of data are sequentially read, the number ofcombinations of the two selected pages PG that can be simultaneouslyread becomes larger than that of the first embodiment. Accordingly, whena plurality of pieces of data are sequentially read, the semiconductormemory device according to the second embodiment operates at a speedfurther higher than that of the semiconductor memory device according tothe first embodiment in some cases.

Third Embodiment

Next, with reference to FIG. 29 , a memory die MD3 according to thethird embodiment will be described. FIG. 29 is a schematic block diagramillustrating a configuration of the memory die MD3 according to thethird embodiment.

As illustrated in FIG. 29 , the memory die MD3 according to the thirdembodiment is configured basically similarly to the memory die MD2according to the second embodiment.

However, as described with reference to FIG. 25 and the like, in thememory die MD2 according to the second embodiment, the address registerADR is configured to latch at least one word line address A_(WL). Theword line decoders WLD0, WLD1 are configured to select one of theplurality of word lines WL corresponding to the respective memory blocksBLK according to this word line address A_(WL).

On the other hand, the address register ADR according to this embodimentis configured to simultaneously latch at least the two word lineaddresses A_(WL). One word line address A_(WL) corresponds to the memoryblock BLKa. The word line decoder WLD0 is configured to select one ofthe plurality of word lines WL corresponding to any of the memory blocksBLKa according to this word line address A_(WL). The other word lineaddress A_(WL) corresponds to the memory block BLKf. The word linedecoder WLD1 is configured to select one of the plurality of word linesWL corresponding to any of the memory blocks BLKf according to this wordline address A_(WL).

[Read Operation]

Next, the read operation of the semiconductor memory device according tothis embodiment will be described.

The semiconductor memory device according to the third embodiment canperform the read operations performable in the semiconductor memorydevices according to the first embodiment and the second embodiment.

In the semiconductor memory device according to the third embodiment,the word lines WL disposed at different height positions in the memoryblock BLKa and the memory block BLKf can be selected. For example, asillustrated in FIG. 27 as an example, assume a case where the readoperation is simultaneously performed on the two memory blocks BLK_(A),BLK_(B). In this case, as illustrated in FIG. 30 , the word line WLcorresponding to the third conductive layer 110 counted from the lowerside can be selected in one memory block BLK_(A) and the word line WLcorresponding to the second conductive layer 110 counted from the lowerside can be selected in the other memory block BLK_(B).

In performing the read operation, the command set is input from thecontroller die (not illustrated) to the memory die MD3.

In performing the read operation, for example, one command set andanother command set may be input to the memory die MD3. In this case,one command set may include one string address A_(SU) (FIG. 29 ), oneblock address A_(BLK) (FIG. 29 ), and one word line address A_(WL) (FIG.29 ). Another command set may include another string address A_(SU)(FIG. 29 ), another block address A_(DLK) (FIG. 29 ), and another wordline address A_(WL) (FIG. 29 ). In this case, another command set mayinclude data other than the string address A_(SU), the block addressA_(BLK), or the word line address A_(WL) or need not include the data.Another command set may include data that designates the memory cellarray region R_(MCA) (FIG. 8 ), data that designates the low-order bit,the middle-order bit, or the high-order bit, and the like. In this case,the data may match the data included in the one command set.

In performing the read operation, for example, one command set may beinput to the memory die MD3. This command set may include, for example,one string address A_(SU) (FIG. 29 ), one block address A_(BLK) (FIG. 29), and one word line address A_(WL) (FIG. 29 ). This command set, forexample, may include another string address A_(SU) (FIG. 29 ), anotherblock address A_(BLK) (FIG. 29 ), and another word line address A_(WL)(FIG. 29 ).

Effects of Third Embodiment

The semiconductor memory device according to the third embodiment canread the data in the two selected pages PG corresponding to the two wordlines WL at the different height positions by the one-time readoperation. Therefore, when a plurality of pieces of data aresequentially read, a combination of the two selected pages PG that canbe simultaneously read becomes larger than that of the secondembodiment. Accordingly, when a plurality of pieces of data aresequentially read, the semiconductor memory device according to thethird embodiment operates at a speed further higher than that of thesemiconductor memory device according to the second embodiment in somecases.

Fourth Embodiment

Next, with reference to FIG. 31 and FIG. 32 , a memory die MD4 accordingto the fourth embodiment will be described. FIG. 31 is a schematic blockdiagram illustrating a configuration of the memory die MD4 according tothe fourth embodiment. FIG. 32 is a schematic circuit diagramillustrating a part of the configuration of the memory die MD4.

As illustrated in FIG. 31 and FIG. 32 , the memory die MD4 according tothe fourth embodiment is configured basically similarly to the memorydie MD3 according to the third embodiment.

However, as described with reference to FIG. 29 and the like, in thememory die MD3 according to the third embodiment, the wiring CG_(S)corresponding to the word line decoder WLD0 and the wiring CG_(S)corresponding to the word line decoder WLD1 are connected to the commondriver unit drv (see FIG. 4 ). Meanwhile, as illustrated in FIG. 31 , inthe memory die MD4 according to the fourth embodiment, the wiring CG_(S)corresponding to the word line decoder WLD0 and the wiring CG;corresponding to the word line decoder WLD1 are connected to thedifferent driver units drv (see FIG. 4 ). Accordingly, in thisembodiment, different voltages can be supplied to the selected word lineWL selected by the block decoder BLKD0 and the word line decoder WLD0and the selected word line WL selected by the block decoder BLKD1 andthe word line decoder WLD1.

As described with reference to FIG. 29 and the like, in the memory dieMD3 according to the third embodiment, the two wirings CG_(S)corresponding to the drain-side select gate line decoders SGDD0, SGDD1are connected to the common driver unit drv (see FIG. 4 ). Meanwhile, asillustrated in FIG. 31 , in the memory die MD4 according to the fourthembodiment, the two wirings CG_(S) corresponding to the drain-sideselect gate line decoders SGDD0, SGDD1 are connected to the differentdriver units dry (see FIG. 4 ). Therefore, in this embodiment, differentvoltages can be supplied to the selected drain-side select gate line SGDselected by the drain-side select gate line decoder SGDD0 and theselected drain-side select gate line SGD selected by the drain-sideselect gate line decoder SGDD1.

As illustrated in FIG. 31 , the memory die MD4 according to the fourthembodiment includes sense amplifier modules SAMa, SAMf, instead of thesense amplifier modules SAM according to the first embodiment. The senseamplifier module SAMa is connected to the plurality of bit lines BLa.The sense amplifier module SAMf is connected to the plurality of bitlines BLf.

The sense amplifier modules SAMa, SAMf are configured basicallysimilarly to the sense amplifier modules SAM according to the firstembodiment.

However, as described with reference to FIG. 6 , in the firstembodiment, the respective signal lines STB, HLL, XXL, BLX, BLC, BLS areconnected in common among all of the sense amplifier units SAU includedin the sense amplifier module SAM. Additionally, the respective signalline STI and the signal line STL in the latch circuit SDL and signallines TI0 to TIn_(L) and TL0 to TLn_(L) in the latch circuits DL0 toDLn_(L) are connected in common among all of the sense amplifier unitsSAU included in the sense amplifier module SAM.

Meanwhile, as illustrated in FIG. 32 , in the fourth embodiment, thesignal lines STB, HLL, XXL, BLX, BLC, BLS are electrically independentbetween the sense amplifier modules SAMa, SAMf. Additionally, the signalline STI and the signal line STL in the latch circuit SDL and the signallines TI0 to TIn_(L) and TL0 to TLn_(L) in the latch circuits DL0 toDLn_(L) are electrically independent between the sense amplifier modulesSAMa, SAMf.

[Read Operation]

Next, the read operation of the semiconductor memory device according tothis embodiment will be described.

The semiconductor memory device according to the fourth embodiment canperform the read operations performable in the semiconductor memorydevices according to the first embodiment to the third embodiment.

In the semiconductor memory device according to the fourth embodiment,different voltages can be supplied to the word line WL included in thememory block BLKa and the word line WL included in the memory blockBLKf. Therefore, for example, as illustrated in FIG. 27 , FIG. 28 , orFIG. 30 as an example, when the two selected pages PG target for readoperation belong to the different memory blocks BLK, read operations ofthe data corresponding to the different voltages are simultaneouslyperformable. For example, the data of low-order bit (see FIG. 16B) canbe read in one selected page PG and the data of middle-order bit (seeFIG. 16B) can be read in the other selected page PG.

For example, in the example of FIG. 33 , the data of low-order bit inthe selected page PG in the string unit SUc in the memory block BLK_(A)and the data of middle-order bit in the selected page PG in the stringunit SUi in the memory block BLK_(B) are simultaneously read.

In the example of FIG. 33 , operations at timing t200 to timing t205 ofthe configuration corresponding to the memory block BLK_(A) areperformed similarly to the operations at the timing t100 to the timingt105 described with reference to FIG. 17 . In the example of FIG. 33 ,operations at the timing t200 to timing t212 of the configurationcorresponding to the memory block BLK_(B) are performed similarly to theoperations at the timing t120 to the timing t132 described withreference to FIG. 21 .

Similarly to the first embodiment, in the read operation of thelow-order bit, data read between the timing t203 to the timing t204 isthe data stored in the selected memory cell MC. In the read operation ofthe middle-order bit or the high-order bit, an arithmetic operation,such as exclusive OR, is performed on three pieces of data read bythree-time sense operation, and thus, the data stored in the selectedmemory cell MC is calculated. Therefore, for example, in the readoperation in FIG. 33 , the arithmetic operation by the sense amplifiermodule SAMa (FIG. 32 ) is not performed but the arithmetic operation,such as exclusive OR, by the sense amplifier module SAMf (FIG. 32 ) isperformed. In this respect, different signals are supplied to therespective signal lines corresponding to the sense amplifier module SAMa(FIG. 32 ) and the respective signal lines corresponding to the senseamplifier module SAMf (FIG. 32).

In the example of FIG. 33 , a voltage of the unselected word line WL_(U)corresponding to the read operation of the low-order bit and a voltageof the unselected word line WL_(U) corresponding to the read operationof the middle-order bit or the high-order bit rise at the same timingt201 and falls at the same timing t210. However, the operation method isonly an example, and the specific operation method is appropriatelyadjustable. For example, the voltage of the unselected word line WL_(U)corresponding to the read operation of the low-order bit may be fallenat the timing t205 and the voltage of the unselected word line WL_(U)corresponding to the read operation of the middle-order bit or thehigh-order bit may be fallen at the timing t210. In this case, forexample, the wiring CG_(U) corresponding to the word line decoder WLD0and the wiring CG_(U) corresponding to the word line decoder WLD1 may beconnected to the different driver units drv (see FIG. 4 ).

In the example of FIG. 31 , the memory die MD4 includes the senseamplifier modules SAMa, SAMf, instead of the sense amplifier module SAM.However, in the example of FIG. 31 , not the sense amplifier modulesSAMa, SAMf, but the sense amplifier module SAM similarly to the firstembodiment to the third embodiment can be disposed. In the case of usingthe configuration as well, the read operation of the low-order bit andthe read operation of the middle-order bit or the high-order bit can besimultaneously performed. For example, the sense operation may beperformed three times also in the memory block BLK where the readoperation of the low-order bit is performed, similarly to the memoryblock BLK where the read operation of the middle-order bit or thehigh-order bit is performed. To employ the configuration and theoperation, all of the data of low-order bit, middle-order bit, andhigh-order bit are preferably calculated by performing the samearithmetic operation on the three pieces of data acquired by thethree-time sense operation. To do so, for example, the datacorresponding to the Er state to the G state are preferably assigned(see FIG. 16B) so as to meet the condition.

In performing the read operation, the command set is input from thecontroller die (not illustrated) to the memory die MD4.

In performing the read operation, for example, one command set andanother command set may be input to the memory die MD4. In this case,one command set may include one string address A_(SU) (FIG. 31 ), oneblock address A_(BLK) (FIG. 31 ), one word line address A_(WL) (FIG. 31), and one piece of data that designates the low-order bit, themiddle-order bit, or the high-order bit. Another command set may includeanother string address A_(SU) (FIG. 31 ), another block address A_(BLK)(FIG. 31 ), another word line address A_(WL) (FIG. 31 ), and anotherpiece of data that designates the low-order bit, the middle-order bit,or the high-order bit. In this case, another command set may includedata other than the string address A_(SU), the block address A_(BLK),the word line address A_(WL), or the data that designates the low-orderbit, the middle-order bit, or the high-order bit or need not include thedata. Another command set may include the data that designates thememory cell array region R_(MCA) (FIG. 8 ). In this case, this data maymatch the data included in the one command set.

In performing the read operation, for example, one command set may beinput to the memory die MD4. This command set, for example, may includeone string address A_(SU) (FIG. 31 ), one block address A_(BLK) (FIG. 31), one word line address A_(WL) (FIG. 31 ), and one piece of data thatdesignates the low-order bit, the middle-order bit, or the high-orderbit. Additionally, this command set may include, for example, anotherstring address A_(SU) (FIG. 31 ), another block address A_(BLK) (FIG. 31), another word line address A_(WL), and another piece of data thatdesignates the low-order bit, the middle-order bit, or the high-orderbit.

Effects of Fourth Embodiment

The semiconductor memory device according to the fourth embodiment canread two pieces of data corresponding to the different read voltages byone-time read operation. Therefore, when a plurality of pieces of dataare sequentially read, a combination of the two selected pages PG thatcan be simultaneously read becomes larger than that of the thirdembodiment. Accordingly, when a plurality of pieces of data aresequentially read, the semiconductor memory device according to thefourth embodiment operates at a speed further higher than that of thesemiconductor memory device according to the third embodiment in somecases.

Fifth Embodiment

Next, with reference to FIG. 34 to FIG. 36 , a memory die MD5 accordingto the fifth embodiment will be described. FIG. 34 is a schematic blockdiagram illustrating a configuration of the memory die MD5 according tothe fifth embodiment. FIG. 35 is a schematic circuit diagramillustrating a part of a configuration of the memory die MD5. FIG. 36 isa schematic plan view illustrating a part of the configuration of thememory die MD5.

As illustrated in FIG. 34 to FIG. 36 , the memory die MD5 according tothe fifth embodiment is configured basically similarly to the memory dieMD3 according to the third embodiment.

However, as illustrated in FIG. 34 , the memory die MD5 according to thefifth embodiment includes the sense amplifier modules SAMa, SAMfaccording to the fourth embodiment, instead of the sense amplifiermodules SAM according to the first embodiment.

Additionally, the memory die MD5 according to the fifth embodimentincludes two conductive layers 112 a, 112 f (FIG. 36 ), instead of theconductive layer 112 described with reference to FIG. 9 and the like.The conductive layers 112 a, 112 f are configured basically similarly tothe conductive layer 112. However, the conductive layer 112 is formedacross the entire region of the memory cell array region R_(MCA). On theother hand, the conductive layer 112 a is formed in a region at one sidein the X-direction (for example, the X-direction negative side in FIG.36 ), and the conductive layer 112 f is formed in a region at the otherside in the X-direction (for example, the X-direction positive side inFIG. 36 ). Additionally, these two conductive layers 112 a, 112 ffunction as two source lines SLa, SLf electrically independent from oneanother.

As illustrated in FIG. 35 , in this embodiment, respective one ends ofthe plurality of memory strings MS in the string unit SUa to the stringunit SUe are connected to the peripheral circuit PC via the source linesSLa, instead of the source lines SL. Additionally, respective one endsof the plurality of memory strings MS in the string unit SUf to thestring unit SUj are connected to the peripheral circuit PC via thesource lines SLf, instead of the source lines SL.

As illustrated in FIG. 34 , in this embodiment, the source line SLa andthe source line SLf are connected to the different driver units dry (seeFIG. 4 ). Therefore, in this embodiment, different voltages can besupplied to the source line SLa and the source line SLf.

[Read Operation]

Next, the read operation of the semiconductor memory device according tothis embodiment will be described.

The semiconductor memory device according to the fifth embodiment canperform the read operations performable in the semiconductor memorydevices according to the first embodiment to the third embodiment.

In the semiconductor memory device according to the fifth embodiment,different voltages can be supplied to the source line SLa and the sourceline SLf. Here, for example, in the read operation, the read voltageV_(CGBR) is supplied to the selected word line WL_(S), the voltageV_(SRC) is supplied to the source line SLa, and a voltage having amagnitude around a difference between the read voltage V_(CGBR) and theread voltage V_(CGAR) is supplied to the source line SLf. In this case,a source-gate voltage of the selected memory cell MC included in any ofthe string unit SUa to the string unit SUe becomes around the readvoltage V_(CGDR). Moreover, a source-gate voltage of the selected memorycell MC included in any of the string unit SUf to the string unit SUjbecomes around the read voltage V_(CGAR). In this state, in the selectedpage PG included in any of the string unit SUa to the string unit SUe,the memory cells MC in the Er state and the A state enter the ON stateand the remaining selected memory cells MC enter the OFF state. In theselected page PG included in any of the string unit SUf to the stringunit SUj, the memory cells MC in the Er state enter the ON state and theremaining selected memory cells MC enter the OFF state. This methodallows simultaneously performing the read operation of the datacorresponding to the different voltages. Additionally, this readoperation can be performed in a case where the two selected pages PGbelong to the same memory block BLK and in a case where the two selectedpages PG belong to the different memory blocks BLK.

For example, in the example of FIG. 37 , the data of low-order bit inthe selected page PG in the string unit SUc in the memory block BLK_(A)and the data of middle-order bit in the selected page PG in the stringunit SUi in the memory block BLK_(R) are simultaneously read.

Operations at timing t300 to timing t304 in the read operation of FIG.37 are performed similarly to the operations at the timing t100 to thetiming t104 in the read operation of FIG. 17 . However, at the timingt301, a voltage V_(CGFR)−V_(CGDR), which is equivalent to a differencebetween the read voltage V_(CGFR) and the read voltage V_(CGDR), issupplied to the source line SLa. At the timing t301, the voltage V_(SRC)is supplied to the source line SLf. At the timing t302, the read voltageV_(CGAR) is supplied to the selected word line WL_(S). Thus, in thestring unit SUi, the selected memory cells MC in the Er state enter theON state and the remaining selected memory cells MC enter the OFF state.At the timing t303 to the timing t304, the sense operation is performedonly in the sense amplifier module SAMf, and the sense operation is notperformed in the sense amplifier module SAMa.

Operations at timing t305 to timing t307 in the read operation of FIG.37 are performed similarly to the operations at the timing t102 to thetiming t104 in the read operation of FIG. 17 . However, at the timingt305, the read voltage V_(CGCR) is supplied to the selected word lineWL_(S). Thus, in the string unit SUi, the selected memory cells MC inthe Er state to the B state enter the ON state, and the remainingselected memory cells MC enter the OFF state. At timing t306 to timingt307, the sense operation is performed only by the sense amplifiermodule SAMf and the sense operation is not performed by the senseamplifier module SAMa.

Operations at timing t308 to timing t310 in the read operation of FIG.37 are performed similarly to the operations at the timing t102 to thetiming t104 in the read operation of FIG. 17 . However, at the timingt308, the read voltage V_(CGFR) is supplied to the selected word lineWL_(S). Thus, in the string unit SUc, the selected memory cells MC inthe Er state to the C state enter the ON state, and the remainingselected memory cells MC enter the OFF state. In the string unit SUi,the selected memory cells MC in the Er state to the E state enter the ONstate, and the remaining selected memory cells MC enter the OFF state.Further, at the timing t303 to the timing t304, the sense operation isperformed by both of the sense amplifier modules SAMa, SAMf.

Operations at the timing t311 to the timing t312 in the read operationof FIG. 37 are performed similarly to the operations at the timing t105to the timing t106 in the read operation of FIG. 17 .

In the read operation according to the fifth embodiment as well,similarly to the read operation according to the fourth embodiment, thearithmetic operation of data is performed as necessary, and thus thedata stored in the memory cell MC is calculated.

For example, in an example of FIG. 38 , the data of middle-order bit inthe selected page PG in the string unit SUc in the memory block BLK_(A)and the data of high-order bit in the selected page PG in the stringunit SUi in the memory block BLK_(B) are simultaneously read.

Operations at timing t320 to timing t332 in the read operation of FIG.38 are performed similarly to the operations at the timing t300 to thetiming t312 in the read operation of FIG. 37 . However, at the timingst322, t325, t329, the voltage of the selected word line WL_(S) iscontrolled to, not the read voltage V_(CGAR), V_(CGCR), V_(CGFR), butthe read voltages V_(CGBR), V_(CGER), V_(CGGR). At the timings t321,t325, and t328, the voltage of the source line SLa is controlled to thevoltages V_(CGBR)−V_(CGAR), V_(CGER)−V_(CGCR), V_(CGGR)−V_(CGFR). At thetimings t323 to t324, t326 to t327, and t329 to t330, the senseoperation is performed by both of the sense amplifier modules SAMa,SAMf.

For example, in the example of FIG. 39 , the data of middle-order bit inthe selected page PG in the string unit SUc in the memory block BLK_(A)and the data of high-order bit in the selected page PG in the stringunit SUi in the memory block BLK_(B) are concurrently read.

Operations at timing t400 to timing t404 in the read operation of FIG.39 are performed similarly to the operations at the timing t100 to thetiming t104 in the read operation of FIG. 17 . However, at the timingt401, a voltage V₁ is supplied to the source line SLa. The voltage V₁is, for example, equal to the voltage V_(CGBR)−V_(CGAR). Alternatively,the voltage V₁ is, for example, equal to the voltage V_(CGGR)−V_(CGFR).At the timing t401, the voltage V_(SRC) is supplied to the source lineSLf. At the timing t402, the read voltage V_(CGBR) is supplied to theselected word line WL_(S). Thus, in the string unit SUc, the selectedmemory cells MC in the Er state enter the ON state, and the remainingselected memory cells MC enter the OFF state. In the string unit SUi,the selected memory cells MC in the Er state and the A state enter theON state, and the remaining selected memory cells MC enter the OFFstate. At the timing t403 to the timing t404, the sense operation isperformed by both of the sense amplifier modules SAMa, SAMf.

Operations at timing t405 to timing t407 in the read operation of FIG.39 are performed similarly to the operations at the timing t102 to thetiming t104 in the read operation of FIG. 17 . However, at the timingt405, a read voltage V_(CGCR)+V₁ is supplied to the selected word lineWL_(S). Thus, in the string unit SUc, the selected memory cells MC inthe Er state to the B state enter the ON state, and the remainingselected memory cells MC enter the OFF state. At the timing t406 to thetiming t407, the sense operation is performed only by the senseamplifier module SAMa and the sense operation is not performed by thesense amplifier module SAMf.

Operations at timing t408 to timing t410 in the read operation of FIG.39 are performed similarly to the operations at the timing t102 to thetiming t104 in the read operation of FIG. 17 . However, at the timingt408, the read voltage V_(CCER) is supplied to the selected word lineWL_(S). Thus, in the string unit SUi, the selected memory cells MC inthe Er state to the D state enter the ON state, and the remainingselected memory cells MC enter the OFF state. At the timing t409 to thetiming t410, the sense operation is performed only by the senseamplifier module SAMf and the sense operation is not performed by thesense amplifier module SAMa.

Operations at timing t411 to timing t413 in the read operation of FIG.39 are performed similarly to the operations at the timing t102 to thetiming t104 in the read operation of FIG. 17 . However, at the timingt411, the read voltage V_(CGGR) is supplied to the selected word lineWL_(S). Thus, in the string unit SUc, the selected memory cells MC inthe Er state to the E state enter the ON state, and the remainingselected memory cells MC enter the OFF state. In the string unit SUi,the selected memory cells MC in the Er state to the F state enter the ONstate, and the remaining selected memory cells MC enter the OFF state.At the timing t412 to the timing t413, the sense operation is performedby both of the sense amplifier modules SAMa, SAMf.

In performing the read operation, the command set is input from thecontroller die (not illustrated) to the memory die MD5. This command setmay be the command set similar to the command set that can be input tothe memory die MD4 according to the fourth embodiment.

Effects of Fifth Embodiment

The semiconductor memory device according to the fifth embodiment canread two pieces of data corresponding to the different read voltages byone-time read operation. Therefore, when a plurality of pieces of dataare sequentially read, a combination of the two selected pages PG thatcan be simultaneously read becomes larger than that of the thirdembodiment. Further, in a case where the two selected pages PG to besimultaneously read belong to the same memory block BLK, the read methodaccording to the fourth embodiment cannot read the two pieces of datacorresponding to different read voltages by one-time read operation. Onthe other hand, in such a case, the semiconductor memory deviceaccording to the fifth embodiment can read the two pieces of datacorresponding to the different read voltages. Accordingly, when aplurality of pieces of data are sequentially read, the semiconductormemory device according to the fifth embodiment operates at a speedfurther higher than that of the semiconductor memory device according tothe fourth embodiment in some cases.

Sixth Embodiment

Next, with reference to FIG. 40 to FIG. 42 , a memory die MD6 accordingto the sixth embodiment will be described. FIG. 40 is a schematiccross-sectional view illustrating a part of a configuration of thememory die MD6 according to the sixth embodiment. FIG. 41 is a schematiccross-sectional view illustrating a part of the configuration of thememory die MD6. FIG. 42 is a schematic plan view illustrating a part ofthe configuration of the memory die MD6.

The memory die MD6 according to the sixth embodiment is configuredbasically similarly to any of the memory die MD according to the firstembodiment to the memory die MD5 according to the fifth embodiment.

However, as described with reference to FIG. 3 and the like, the memoryblocks BLK according to the first embodiment to the fifth embodimentinclude the 10 string units SU (the string unit SUa to the string unitSUj). Meanwhile, as illustrated in FIG. 42 , a memory block BLK′according to the sixth embodiment includes the 20 string units SU (astring unit SUa′ to a string unit SUt′). The string unit SUa′ to thestring unit SUj′ are configured similarly to the string unit SUa to thestring unit SUe. The string unit SUk′ to the string unit SUt′ areconfigured similarly to the string unit SUf to the string unit SUj.

The memory die MD6 according to the sixth embodiment includes conductivelayers 110 a, 110 f, instead of the conductive layers 110 described withreference to FIG. 10 and the like. The conductive layers 110 a, 110 fare configured basically similarly to the conductive layers 110.However, the conductive layers 110, which function as the word lines WL,are formed across the entire region of the memory cell array regionR_(MCA). On the other hand, the conductive layers 110 a functioning asthe word lines WL are formed in a region at one side in the X-direction(for example, the X-direction negative side in FIG. 42 ), and theconductive layers 110 f functioning as the word lines WL are formed in aregion at the other side in the X-direction (for example, theX-direction positive side in FIG. 42 ). These two conductive layers 110a, 110 f are connected to one another via the contacts CC and wiringsW_(WL). For example, the wirings W_(WL) are achieved by the wirings m0(FIG. 40 , FIG. 41 ), and the like.

The semiconductor memory device according to the sixth embodiment canperform at least one of the read operations performable in thesemiconductor memory devices according to the first embodiment to thefifth embodiment.

Other Embodiments

The configurations of the semiconductor memory devices according to thefirst embodiment to the sixth embodiment and the read operationsperformable in the respective configurations have been described above.However, the above-described configurations and methods of readoperation are only examples and the specific configuration and themethod of read operation are appropriately adjustable. Hereinafter, thispoint will be described with examples.

[Circuit Configuration]

The circuit configurations and the like of the semiconductor memorydevices according to the first embodiment to the sixth embodiment areappropriately adjustable. For example, the memory die MD4 according tothe fourth embodiment (FIG. 31 ) and the memory die MD6 according to thesixth embodiment may include the source lines SLa, SLf similarly to thememory die MD5 (FIG. 34 ) according to the fifth embodiment, instead ofthe source lines SL. Similarly to the memory die MD5 (FIG. 34 )according to the fifth embodiment, the configuration in which differentvoltages can be supplied may be provided to the source line SLa and thesource line SLf.

The configurations of the respective circuits included in thesemiconductor memory devices according to the first embodiment to thesixth embodiment are appropriately adjustable. For example, in theexample of FIG. 32 , the signal lines STB, HLL, XXL, BLX, BLC, BLS areelectrically independent between the sense amplifier modules SAMa, SAMf.However, this configuration is only an example, and the specificconfiguration is adjustable as necessary. For example, the signal lineSTB may be configured to be electrically independent between the senseamplifier modules SAMa, SAMf. The signal lines HLL, XXL, BLX, BLC, BLSmay be configured to be electrically common among the sense amplifiermodules SAMa, SAM f.

[Structure of Memory Die]

The structures of the memory dies MD to MD6 according to the firstembodiment to the sixth embodiment are appropriately adjustable.

For example, in the above-described embodiments, as described withreference to FIG. 8 and the like, the two memory hole regions R_(MH)arranged in the X-direction are disposed in the memory cell array regionR_(MCA). As described with reference to FIG. 1 and the like, the addressregister ADR is configured to so as to ensure latching at least the twostring addresses A_(SU). The peripheral circuit PC is configured toselect one of the plurality of string unit SUa to string unit SUe in onememory hole region R_(MH) according to one string address A_(SU).Additionally, the peripheral circuit PC is configured to select one ofthe plurality of string unit SUf to string unit SUj in the other memoryhole region R_(MH) according to the other string address A_(SU).

However, the configuration is only an example, and a specificconfiguration is appropriately adjustable. For example, the n_(m) (n_(m)is a positive integer of 3 or more) memory hole regions R_(MH) arrangedin the X-direction may be disposed in the memory cell array regionR_(MCA). The address register ADR may be configured to latch at leastthe n_(m) string addresses A_(SU). The peripheral circuit PC may beconfigured to select one of the plurality of string units SU in thek_(m)-th (k_(m) is a positive integer of 1 or more and n_(m) or less)memory hole region R_(MH) according to the k_(m)-th string addressA_(SU).

For example, FIG. 43 illustrates an example of n_(m) being 4. That is,in the example of FIG. 43 , the four memory hole regions R_(MH) arrangedin the X-direction are disposed in the memory cell array region R_(MCA).Additionally, one first hook-up region R_(HU1) is disposed at one sidein the X-direction (for example, the X-direction negative side in FIG.43 ) and at the other side (for example, the X-direction positive sidein FIG. 43 ) for each of these two memory hole regions R_(MH). That is,in the example of FIG. 43 , the memory cell array region R_(MCA)includes the four first hook-up regions R_(HU1) arranged in theX-direction.

FIG. 44 is a schematic enlarged view of a part indicated by Fin FIG. 43. In the example of FIG. 44 , the conductive layers 110 functioning asthe drain-side select gate lines SGD are separated into two parts in theX-direction. A part disposed at one side in the X-direction (forexample, the X-direction negative side in FIG. 44 ) and a part disposedat the other side in the X-direction (for example, the X-directionpositive side in FIG. 44 ) function as the two drain-side select gatelines SGD electrically independent from one another. FIG. 44 illustratesthe plurality of drain-side select gate lines SGD disposed at one sidein the X-direction as a drain-side select gate line SGDa1 to adrain-side select gate line SGDe1 as an example. The plurality ofdrain-side select gate lines SGD disposed at the other side in theX-direction are illustrated as a drain-side select gate line SGDa0 to adrain-side select gate line SGDe0 as an example.

FIG. 45 is a schematic enlarged view of a part indicated by G in FIG. 43. In the example of FIG. 45 , the conductive layers 110 functioning asthe drain-side select gate lines SGD are separated into two parts in theX-direction. A part disposed at one side in the X-direction (forexample, the X-direction negative side in FIG. 45 ) and a part disposedat the other side in the X-direction (for example, the X-directionpositive side in FIG. 45 ) function as the two drain-side select gatelines SGD electrically independent from one another. FIG. 45 illustratesthe plurality of drain-side select gate lines SGD disposed at one sidein the X-direction as a drain-side select gate line SGDf0 to adrain-side select gate line SGDj0 as an example. The plurality ofdrain-side select gate lines SGD disposed at the other side in theX-direction are illustrated as a drain-side select gate line SGDf1 to adrain-side select gate line SGDj1 as an example.

In the example of FIG. 43 to FIG. 45 , the conductive layers 110functioning as the word lines WL extend in the X-direction across thefour memory hole regions R_(MH) arranged in the X-direction.

To employ the configuration as illustrated in FIG. 43 to FIG. 45 as anexample, the address register ADR may be configured to latch at leastthe four string addresses A_(SU). The peripheral circuit PC may beconfigured to select any of the drain-side select gate line SGDa0 to thedrain-side select gate line SGDe0 according to the first string addressA_(SU). The peripheral circuit PC may be configured to select any of thedrain-side select gate line SGDa1 to the drain-side select gate lineSGDe1 according to the second string address A_(SU). Further, theperipheral circuit PC may be configured to select any of the drain-sideselect gate line SGDf0 to the drain-side select gate line SGDj0according to the third string address A_(SU). The peripheral circuit PCmay be configured to select any of the drain-side select gate line SGDf1to the drain-side select gate line SGDj1 according to the fourth stringaddress A_(SU).

For example, the semiconductor memory devices according to the firstembodiment to the fifth embodiment include the conductive layers 110,and the semiconductor memory device according to the sixth embodimentincludes the conductive layers 110 a and the conductive layers 110 f.However, this configuration is only an example, and the specificconfiguration is adjustable as necessary. For example, in thesemiconductor memory devices according to the first embodiment to thefifth embodiment, a part of the conductive layers 110 may be exchangedfor the set of the conductive layers 110 a and the conductive layers 110f. For example, among the plurality of conductive layers 110 functioningas the word lines WL, the plurality of respective conductive layers 110positioned on the uppermost side may be exchanged for the set of theconductive layers 110 a and the conductive layers 110 f.

For example, in the above-described description, as described withreference to FIG. 8 , FIG. 9 , and the like, the memory cell array layerL_(MCA) is disposed separated from the semiconductor substrate 100, andthe transistor layer L_(TR) is disposed between the memory cell arraylayer L_(MCA) and the semiconductor substrate 100. Moreover, theconfiguration in the memory cell array MCA is disposed in the memorycell array layer L_(MCA), and the configuration in the peripheralcircuit PC is disposed in the transistor layer L_(TR). However, thisconfiguration is only an example, and the specific configuration isadjustable as necessary.

For example, in an example of FIG. 46 and FIG. 47 , both of theconfiguration in the memory cell array MCA and the configuration in theperipheral circuit PC are disposed on an upper surface of asemiconductor substrate 100′.

That is, a memory die MD8 illustrated in FIG. 46 as an example includesthe semiconductor substrate 100′. In the illustrated example, thesemiconductor substrate 100′ includes four memory cell array regionsR_(MCA)′ arranged in the X-direction and the Y-direction. Additionally,the memory cell array region R_(MCA)′ includes a part of theconfigurations of the block decoders BLKD (see FIG. 4 and FIG. 5 ) inregions at one side and the other side in the X-direction. The memorycell array region R_(MCA)′ includes the two memory hole regions R_(MH)arranged in the X-direction. In each of regions between the memory holeregions R_(MH) and the block decoders BLKD, the first hook-up regionR_(HU1) is disposed. In each of regions between one or both of the firsthook-up regions R_(HU), and the block decoders BLKD, the second hook-upregion R_(HU2) is disposed. In a region at one side in the Y-directionof the memory cell array region R_(MCA)′, the configurations in thesense amplifier module SAM and the cache memory CM are disposed. On anend portion in the Y-direction of the semiconductor substrate 100′, theperipheral region R_(P) is disposed. The peripheral region R_(P) extendsin the X-direction along the end portion in the Y-direction of thesemiconductor substrate 100′.

For example, as illustrated in FIG. 47 , the memory die MD8 includes adevice layer Lo disposed on the semiconductor substrate 100′ and thewiring layer M0 disposed above the device layer L_(D). Although theillustration is omitted in FIG. 47 , a plurality of wiring layers arefurther disposed above the wiring layer M0.

The semiconductor substrate 100′ is configured basically similarly tothe semiconductor substrate 100 (FIG. 9 ) according to the firstembodiment. However, the semiconductor substrate 100′ is connected tothe lower ends of the semiconductor columns 120.

The configuration of the device layer LD in the memory hole regionR_(MH), the first hook-up region R_(HU1), and the second hook-up regionR_(HU2) is basically similar to the configuration of the memory cellarray layer L_(MCA) (FIG. 9 ) in the memory hole region RM_(H), thefirst hook-up region R_(HU1), and the second hook-up region R_(HU2).However, the device layer L_(D) does not include the conductive layer112 (FIG. 9 ). The lower ends of the configurations, such as thesemiconductor columns 120, connected to the conductive layer 112 in thefirst embodiment are connected to the upper surface of the semiconductorsubstrate 100′. Further, the device layer LD does not include thecontact connection sub-regions r_(C4T) (FIG. 10 ).

Configurations corresponding to the block decoder BLKD, the senseamplifier modules SAM, and the cache memory CM in the device layer L_(D)are basically similar to the configurations in the transistor layerL_(TR) (FIG. 9 ). However, specific configurations, such as the locationof the transistors Tr, are appropriately adjustable.

In the above description, the example in which the configurations in thememory cell array MCA and the configurations in the peripheral circuitPC are both formed on the same semiconductor substrates 100, 100′ hasbeen described. However, this configuration is only an example, and thespecific configuration is adjustable as necessary. For example, a memorydie MD9 illustrated in FIG. 48 as an example includes a chip C_(MCA) anda chip C_(TR). The chip C_(MCA) includes one semiconductor substrate(not illustrated) and the configurations in the memory cell array MCA.Note that the chip C_(MCA) may include a part of the configuration inthe peripheral circuit PC. The chip C_(TR) includes anothersemiconductor substrate (not illustrated) and all of or a part of theconfiguration in the peripheral circuit PC. The chips C_(MCA), C_(TR)each include a plurality of bonding electrodes P_(I) containing copper(Cu). The respective configurations in the chips C_(MCA), C_(TR) areelectrically connected via the bonding electrodes P_(I). For example,the word line WL and the select transistor (STD, STS) in the chipC_(MCA) may be connected to the block decoder BLKD (FIG. 4 , FIG. 5 )via the bonding electrodes P_(I).

[Read Operation]

In the above description, when the plurality of patterns of readvoltages are supplied to the selected word line WL_(S) in the readoperation, the read voltages are supplied in the ascending order.However, this operation is only an example, and the specific aspect isappropriately adjustable. For example, when the plurality of patterns ofread voltages are supplied to the selected word line WL_(S) in the readoperation, the read voltage may be supplied in the descending order.

For example, in the read operation, at a timing when the read passvoltage V_(READ) is supplied to the unselected word lines WL_(S), theread pass voltage V_(READ) may be supplied to the selected word lineWL_(S). For example, after the supply of the read voltage to theselected word line WL_(S) is terminated, the read pass voltage V_(READ)may be supplied to the selected word line WL_(S).

For example, as described with reference to FIG. 31 , in the memory dieMD4 according to the fourth embodiment, the two wirings CG_(S)corresponding to the word line decoders WLD0, WLD1 are connected to thedifferent driver units drv (see FIG. 4 ). For example, as described withreference to FIG. 34 , in the memory die MD5 according to the fifthembodiment, the source line SLa and the source line SLf are connected tothe different driver units dry (see FIG. 4 ). Additionally, in thefourth embodiment and the fifth embodiment, by these configurations, theoperation that simultaneously or concurrently performs the readoperation of data corresponding to the different voltages on the twoselected pages PG is achieved. However, this method is only an example,and the specific method is appropriately adjustable.

For example, in the semiconductor memory device according to any of thefirst embodiment to the third embodiment, instead of the sense amplifiermodules SAM, the sense amplifier modules SAMa, SAMf may be disposed. Inthe read operation, a plurality of read voltages corresponding to two ofthe low-order bit, the middle-order bit, and the high-order bit may besequentially supplied to the selected word line WL_(S). At a timing whenthe corresponding to read voltage is supplied, the sense operation maybe performed by the corresponding sense amplifier modules SAMa, SAMf.

For example, FIG. 49 illustrates an example in which the sense amplifiermodule SAMa reads the data of middle-order bit and the sense amplifiermodule SAMf reads the data of high-order bit.

In the example of FIG. 49 , at timings t502, t508, t514, the readvoltages V_(CGAR), V_(CGCR), V_(CGFR) corresponding to the middle-orderbit are supplied to the selected word line WL_(S). Additionally, atsubsequent timings t503 to t504, t509 to t510, and t515 to t516, onlythe sense operation by the sense amplifier module SAMa is performed, andthe sense operation by the sense amplifier module SAMf is not performed.

Additionally, in the example of FIG. 49 , at timings t505, t511, andt517, the read voltages V_(CGBR), V_(CGER), V_(CGGR) corresponding tothe high-order bit are supplied to the selected word line WL_(S). At thesubsequent timings t506 to t507, t512 to t513, and t518 to t519, onlythe sense operation by the sense amplifier module SAMf is performed, andthe sense operation by the sense amplifier module SAMa is not performed.

This read operation can be performed in both cases where the selectedpage PG corresponding to any of the string unit SUa to the string unitSUe and the selected page PG corresponding to any of the string unit SUfto the string unit SUj belong to the same memory block BLK and belong tothe different memory blocks BLK.

[Others]

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel methods and systems describedherein may be embodied in a variety of other forms: furthermore, variousomissions, substitutions and changes in the form of the methods andsystems described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the inventions.

1: A semiconductor memory device comprising: a substrate; a plurality offirst word lines that are arranged in a first direction intersectingwith a surface of the substrate; a plurality of second word lines thatare arranged in the first direction and arranged with the first wordlines in a second direction intersecting with the first direction; afirst select gate line that extends in a third direction intersectingwith the first direction and the second direction, the first select gateline being disposed at a position overlapping with the plurality offirst word lines viewed from the first direction; a second select gateline that extends in the third direction, the second select gate linebeing disposed at a position overlapping with the plurality of firstword lines viewed from the first direction, the second select gate linebeing arranged with the first select gate line in the third direction; afirst semiconductor column that extends in the first direction, thefirst semiconductor column being opposed to the plurality of first wordlines and the first select gate line; a second semiconductor column thatextends in the first direction, the second semiconductor column beingopposed to the plurality of first word lines and the second select gateline; a first transistor electrically connected to the first select gateline; and a second transistor electrically connected to the secondselect gate line. 2: The semiconductor memory device according to claim1, wherein a length in the third direction of the first select gate lineis smaller than a half length in the third direction of at least one ofthe plurality of first word lines, and a length in the third directionof the second select gate line is smaller than the half length in thethird direction of at least one of the plurality of first word lines. 3:The semiconductor memory device according to claim 1, wherein thesemiconductor memory device is configured to simultaneously supplydifferent voltages to the first select gate line and the second selectgate line. 4: The semiconductor memory device according to claim 1,wherein in a first read operation: the first select gate line isselected; and the second select gate line is unselected. 5: Thesemiconductor memory device according to claim 4, wherein in a secondread operation: the first select gate line is selected; and the secondselect gate line is selected. 6: The semiconductor memory deviceaccording to claim 5, wherein a data size of data read by the first readoperation is smaller than a data size of data read by the second readoperation. 7: The semiconductor memory device according to claim 1,further comprising: a third select gate line that extends in the thirddirection, the third select gate line being disposed at a positionoverlapping with the plurality of first word lines viewed from the firstdirection, the third select gate line being arranged with the firstselect gate line in the second direction; a fourth select gate line thatextends in the third direction, the fourth select gate line beingdisposed at a position overlapping with the plurality of first wordlines viewed from the first direction, the fourth select gate line beingarranged with the third select gate line in the third direction, thefourth select gate line being arranged with the second select gate linein the second direction; a third semiconductor column that extends inthe first direction, the third semiconductor column being opposed to theplurality of first word lines and the third select gate line; and afourth semiconductor column that extends in the first direction, thefourth semiconductor column being opposed to the plurality of first wordlines and the fourth select gate line, wherein the semiconductor memorydevice is configured to simultaneously supply different voltages to thefirst select gate line and the second select gate line and differentvoltages to the third select gate line and the fourth select gate line.8: The semiconductor memory device according to claim 7, wherein in thefirst read operation: the third select gate line is unselected; and thefourth select gate line is selected. 9: The semiconductor memory deviceaccording to claim 7, wherein in the second read operation: the thirdselect gate line is unselected; and the fourth select gate line isunselected. 10: The semiconductor memory device according to claim 5,further comprising: a fifth select gate line that extends in the thirddirection, the fifth select gate line being disposed at a positionoverlapping with the plurality of second word lines viewed from thefirst direction; a sixth select gate line that extends in the thirddirection, the sixth select gate line being disposed at a positionoverlapping with the plurality of second word lines viewed from thefirst direction, the sixth select gate line being arranged with thefifth select gate line in the third direction; a fifth semiconductorcolumn that extends in the first direction, the fifth semiconductorcolumn being opposed to the plurality of second word lines and the fifthselect gate line; and a sixth semiconductor column that extends in thefirst direction, the sixth semiconductor column being opposed to theplurality of second word lines and the sixth select gate line, whereinthe semiconductor memory device is configured to simultaneously supplydifferent voltages to the first select gate line and the second selectgate line and different voltages to the fifth select gate line and thesixth select gate line. 11: The semiconductor memory device according toclaim 10, wherein in the second read operation: the fifth select gateline is unselected; and the sixth select gate line is unselected. 12:The semiconductor memory device according to claim 11, wherein one ofthe plurality of first word lines is a third word line; another one ofthe plurality of first word lines different from the third word line isa fourth word line; and in the second read operation: the third wordline is selected; and the fourth word line is unselected. 13: Thesemiconductor memory device according to claim 10, wherein in a thirdread operation: the first select gate line is selected; the secondselect gate line is unselected; the fifth select gate line isunselected; and the sixth select gate line is selected. 14: Thesemiconductor memory device according to claim 13, wherein one of theplurality of first word lines is a third word line; another one of theplurality of first word lines different from the third word line is afourth word line; one of the plurality of second word lines is a fifthword line; another one of the plurality of second word lines differentfrom the fifth word line is a sixth word line; and in the third readoperation: the third word line is selected; the fourth word line isunselected; the fifth word line is selected; and the sixth word line isunselected. 15: The semiconductor memory device according to claim 14,wherein the third word line is an n-th (n is a positive integer of 1 ormore) conductive layer counted from one side in the first directionamong the plurality of first word lines, and the fifth word line is then-th conductive layer counted from the one side in the first directionamong the plurality of second word lines. 16: The semiconductor memorydevice according to claim 15, wherein the third word line is an n-th (nis a positive integer of 1 or more) conductive layer counted from oneside in the first direction among the plurality of first word lines, thefifth word line is an m-th (m is a positive integer of 1 or more)conductive layer counted from the one side in the first direction amongthe plurality of second word lines, and the n differs from the m. 17:The semiconductor memory device according to claim 1, furthercomprising: a third select gate line that extends in the thirddirection, the third select gate line being disposed at a positionoverlapping with the plurality of first word lines viewed from the firstdirection, the third select gate line being arranged with the firstselect gate line in the second direction; a fourth select gate line thatextends in the third direction, the fourth select gate line beingdisposed at a position overlapping with the plurality of first wordlines viewed from the first direction, the fourth select gate line beingarranged with the third select gate line in the third direction, thefourth select gate line being arranged with the second select gate linein the second direction; a third semiconductor column that extends inthe first direction, the third semiconductor column being opposed to theplurality of first word lines and the third select gate line; and afourth semiconductor column that extends in the first direction, thefourth semiconductor column being opposed to the plurality of first wordlines and the fourth select gate line, wherein the semiconductor memorydevice is configured to simultaneously supply different voltages to thefirst select gate line and the second select gate line and differentvoltages to the third select gate line and the fourth select gate line.18: The semiconductor memory device according to claim 1, furthercomprising: a third select gate line that extends in the thirddirection, the third select gate line that being arranged with the firstselect gate line in the second direction and being disposed at aposition overlapping with the plurality of second word lines viewed fromthe first direction; and a fourth select gate line that extends in thethird direction, the fourth select gate line being arranged with thesecond select gate line in the second direction, being arranged with thethird select gate line in the third direction, and being disposed at aposition overlapping with the plurality of second word lines viewed fromthe first direction. 19: The semiconductor memory device according toclaim 18, further comprising: a first memory hole region including thefirst semiconductor column; a second memory hole region including thesecond semiconductor column and being arranged with the first memoryhole region in the third direction; a first hook-up region disposedbetween the first memory hole region and the second memory hole region;a second hook-up region disposed between the first memory hole regionand the second memory hole region; and a third hook-up region disposedbetween the first hook-up region and the second hook-up region. 20: Thesemiconductor memory device according to claim 19, further comprising: aplurality of first contacts each connected to the plurality of thesecond word line; and a plurality of second contacts each electricallyconnected to the plurality of first contacts and disposed in the firsthook-up region, the second hook-up region, or the third hook-up region.